Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
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Preparation technology of ultrahigh-purity silicon carbide powder applied to field of semiconductors
The invention provides a preparation technology of ultrahigh-purity silicon carbide powder applied to the field of semiconductors, the preparation technology comprises the following steps: selecting a carbon-silicon polymer with a correct molecular structure and element composition, purity, a liquid curing mode and a granulation technology, and controlling pollutants in the processes of preparation, preparation, curing, thermal cracking and the like, controlling the total content of impurities such as trace pollution elements such as Al, Fe, B, P, Pt, Ca, Mg, Li, Na, Ni, V, Ti, Ce, Cr, S, As and the like to be lower than 10ppm so that the semiconductor grade silicon carbide powder with the purity of 99999 or 999999 or higher purity is prepared, and the prepared silicon carbide high-purity powder can meet the requirements of purity, particle size, density, morphology and the like required by growth of silicon carbide substrate wafers, coatings on silicon carbide graphite epitaxial bases and synthetic diamond moissanite crystals.
本发明提供了一种应用于半导体领域中超高纯碳化硅粉制备技术，通过选择正确分子结构、元素组成的碳硅类聚合物、纯度、液体固化方式、造粒技术及控制配制、制备、固化和热裂解等过程中的污染物，控制微量污染元素如Al、Fe、B、P、Pt、Ca、Mg、Li、Na、Ni、V、Ti、Ce、Cr、S和As等杂质总含量低于10ppm，从而制备出具有5个9、6个9或更高纯度的半导体级碳化硅粉体的生产技术，并且所制备的碳化硅高纯粉能够满足碳化硅衬底晶圆片、碳化硅石墨外延基座上涂层及合成钻石莫桑石晶体生长所要求的纯度、粒径、密度、形貌等要求。
Preparation technology of ultrahigh-purity silicon carbide powder applied to field of semiconductors
The invention provides a preparation technology of ultrahigh-purity silicon carbide powder applied to the field of semiconductors, the preparation technology comprises the following steps: selecting a carbon-silicon polymer with a correct molecular structure and element composition, purity, a liquid curing mode and a granulation technology, and controlling pollutants in the processes of preparation, preparation, curing, thermal cracking and the like, controlling the total content of impurities such as trace pollution elements such as Al, Fe, B, P, Pt, Ca, Mg, Li, Na, Ni, V, Ti, Ce, Cr, S, As and the like to be lower than 10ppm so that the semiconductor grade silicon carbide powder with the purity of 99999 or 999999 or higher purity is prepared, and the prepared silicon carbide high-purity powder can meet the requirements of purity, particle size, density, morphology and the like required by growth of silicon carbide substrate wafers, coatings on silicon carbide graphite epitaxial bases and synthetic diamond moissanite crystals.
本发明提供了一种应用于半导体领域中超高纯碳化硅粉制备技术，通过选择正确分子结构、元素组成的碳硅类聚合物、纯度、液体固化方式、造粒技术及控制配制、制备、固化和热裂解等过程中的污染物，控制微量污染元素如Al、Fe、B、P、Pt、Ca、Mg、Li、Na、Ni、V、Ti、Ce、Cr、S和As等杂质总含量低于10ppm，从而制备出具有5个9、6个9或更高纯度的半导体级碳化硅粉体的生产技术，并且所制备的碳化硅高纯粉能够满足碳化硅衬底晶圆片、碳化硅石墨外延基座上涂层及合成钻石莫桑石晶体生长所要求的纯度、粒径、密度、形貌等要求。
Preparation technology of ultrahigh-purity silicon carbide powder applied to field of semiconductors
应用于半导体领域中的超高纯碳化硅粉制备技术
ZHOU XIDONG (Autor:in) / LIU LANYING (Autor:in)
05.11.2021
Patent
Elektronische Ressource
Chinesisch
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