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Temperature-stable low-dielectric-loss microwave dielectric ceramic material and preparation method thereof
The invention belongs to the technical field of ceramic materials, and discloses a temperature-stable low-dielectric-loss microwave dielectric ceramic material and a preparation method thereof, the expression of the microwave dielectric ceramic material is (Mg1/3Nb2/3) x (Zr0. 5Ti0.5) 1-xO2, and x is equal to 0.1-0.2; MgO, TiO2, ZrO2 and Nb2O5 are used as raw materials, and an annealing process is carried out after traditional solid-phase sintering, and the temperature coefficient tau f of resonance frequency is + 13 to-13 ppm/DEG C, the quality factor Q * f value is 37072 GHz to 45530 GHz, and the dielectric constant epsilon r is 38.9 to 41.7. The microwave dielectric ceramic material disclosed by the invention has a relatively high quality factor and a near-zero temperature coefficient of resonance frequency; and meanwhile, the preparation process is simple, and the temperature-stable low-dielectric-loss microwave dielectric ceramic material can be well compatible with the existing process, can be used as a candidate material of a 5G microwave dielectric resonator, and is wide in application prospect.
本发明属于陶瓷材料技术领域，公开了一种温度稳定型低介电损耗的微波介质陶瓷材料及其制备方法，该微波介质陶瓷材料表达式为(Mg1/3Nb2/3)x(Zr0.5Ti0.5)1‑xO2,其中x＝0.1～0.2；以MgO、TiO2、ZrO2、Nb2O5为原料，采用传统固相烧结后进行退火工艺得到；其谐振频率温度系数τf为+13～‑13ppm/℃，品质因数Q×f值为37072GHz～45530GHz，介电常数εr为38.9～41.7。本发明的微波介质陶瓷材料具有较高的品质因数和近零的谐振频率温度系数；同时制备工艺简单，与现有工艺能够较好兼容，可以作为5G微波介质谐振器的候选材料，应用前景广泛。
Temperature-stable low-dielectric-loss microwave dielectric ceramic material and preparation method thereof
The invention belongs to the technical field of ceramic materials, and discloses a temperature-stable low-dielectric-loss microwave dielectric ceramic material and a preparation method thereof, the expression of the microwave dielectric ceramic material is (Mg1/3Nb2/3) x (Zr0. 5Ti0.5) 1-xO2, and x is equal to 0.1-0.2; MgO, TiO2, ZrO2 and Nb2O5 are used as raw materials, and an annealing process is carried out after traditional solid-phase sintering, and the temperature coefficient tau f of resonance frequency is + 13 to-13 ppm/DEG C, the quality factor Q * f value is 37072 GHz to 45530 GHz, and the dielectric constant epsilon r is 38.9 to 41.7. The microwave dielectric ceramic material disclosed by the invention has a relatively high quality factor and a near-zero temperature coefficient of resonance frequency; and meanwhile, the preparation process is simple, and the temperature-stable low-dielectric-loss microwave dielectric ceramic material can be well compatible with the existing process, can be used as a candidate material of a 5G microwave dielectric resonator, and is wide in application prospect.
本发明属于陶瓷材料技术领域，公开了一种温度稳定型低介电损耗的微波介质陶瓷材料及其制备方法，该微波介质陶瓷材料表达式为(Mg1/3Nb2/3)x(Zr0.5Ti0.5)1‑xO2,其中x＝0.1～0.2；以MgO、TiO2、ZrO2、Nb2O5为原料，采用传统固相烧结后进行退火工艺得到；其谐振频率温度系数τf为+13～‑13ppm/℃，品质因数Q×f值为37072GHz～45530GHz，介电常数εr为38.9～41.7。本发明的微波介质陶瓷材料具有较高的品质因数和近零的谐振频率温度系数；同时制备工艺简单，与现有工艺能够较好兼容，可以作为5G微波介质谐振器的候选材料，应用前景广泛。
Temperature-stable low-dielectric-loss microwave dielectric ceramic material and preparation method thereof
温度稳定型低介电损耗的微波介质陶瓷材料及其制备方法
LI LINGXIA (Autor:in) / LI YUTING (Autor:in) / QIAO JIANLI (Autor:in)
04.01.2022
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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