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Improved rapid sintering method of silicon carbide honeycomb ceramic unit body
The invention discloses an improved rapid sintering method for a silicon carbide honeycomb ceramic unit body. The method comprises the following steps: putting a silicon carbide honeycomb ceramic unit body into a sintering furnace; creating a firing environment in the firing furnace; conducting sintering, specifically raising the temperature to 800 DEG C from the room temperature at the temperature raising rate of 6.0 DEG C/min, raising the temperature to 1100 DEG C from the room temperature at the temperature raising rate of 2.0 DEG C/min, keeping the temperature for 2 h, raising the temperature to 1400 DEG C at the temperature raising rate of 0.8 DEG C/min, keeping the temperature for 1 hour, raising the temperature to 1460 DEG C at the temperature raising rate of 0.2 DEG C/min, and keeping the temperature for 2 hours; and stopping heating, and conducting cooling to room temperature along with the furnace. By adopting the design provided by the invention, the overall temperature rise time is 20.9 hours, and compared with 32.5 hours in the prior art, the firing efficiency is greatly improved.
本发明公开了一种改进的碳化硅蜂窝陶瓷单元体快速烧成方法,包括以下步骤:将碳化硅蜂窝陶瓷单元体放入烧制炉;在烧制炉中营造烧制环境;进行烧制,以6.0℃/min的升温速率从室温升温至800℃;以2.0℃/min的升温速率从室温升温至1100℃,保温2 h;以0.8℃/min的升温速率升温至1400℃,保温1 h;以0.2℃/min的升温速率升温至1460℃,保温2 h;停止加热,随炉冷却至室温。采用本发明的设计,整体升温时间时间为20.9小时,相对于现有技术的32.5小时,大大提高了烧成效率。
Improved rapid sintering method of silicon carbide honeycomb ceramic unit body
The invention discloses an improved rapid sintering method for a silicon carbide honeycomb ceramic unit body. The method comprises the following steps: putting a silicon carbide honeycomb ceramic unit body into a sintering furnace; creating a firing environment in the firing furnace; conducting sintering, specifically raising the temperature to 800 DEG C from the room temperature at the temperature raising rate of 6.0 DEG C/min, raising the temperature to 1100 DEG C from the room temperature at the temperature raising rate of 2.0 DEG C/min, keeping the temperature for 2 h, raising the temperature to 1400 DEG C at the temperature raising rate of 0.8 DEG C/min, keeping the temperature for 1 hour, raising the temperature to 1460 DEG C at the temperature raising rate of 0.2 DEG C/min, and keeping the temperature for 2 hours; and stopping heating, and conducting cooling to room temperature along with the furnace. By adopting the design provided by the invention, the overall temperature rise time is 20.9 hours, and compared with 32.5 hours in the prior art, the firing efficiency is greatly improved.
本发明公开了一种改进的碳化硅蜂窝陶瓷单元体快速烧成方法,包括以下步骤:将碳化硅蜂窝陶瓷单元体放入烧制炉;在烧制炉中营造烧制环境;进行烧制,以6.0℃/min的升温速率从室温升温至800℃;以2.0℃/min的升温速率从室温升温至1100℃,保温2 h;以0.8℃/min的升温速率升温至1400℃,保温1 h;以0.2℃/min的升温速率升温至1460℃,保温2 h;停止加热,随炉冷却至室温。采用本发明的设计,整体升温时间时间为20.9小时,相对于现有技术的32.5小时,大大提高了烧成效率。
Improved rapid sintering method of silicon carbide honeycomb ceramic unit body
一种改进的碳化硅蜂窝陶瓷单元体快速烧成方法
LIANG RUI (Autor:in) / CAI KAI (Autor:in) / SHEN QINJUAN (Autor:in)
04.01.2022
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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