Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Hafnium diboride-silicon carbide-tantalum disilicide-gadolinium oxide composite powder and preparation method thereof
The invention provides hafnium diboride-silicon carbide-tantalum disilicide-gadolinium oxide composite powder and a preparation method thereof, and belongs to the technical field of composite powder materials. Silicon carbide and tantalum disilicide are used as high-temperature oxidation resistance modification components and are oxidized at high temperature to form a silicon oxide glass phase to play a role in sealing and filling pores; the gadolinium oxide is used as an emissivity modification component, on one hand, the gadolinium oxide can enhance the viscosity of a silica glass phase and improve the high-temperature thermal stability of a glass phase protective layer; and on the other hand, the gadolinium oxide is used as a high emission phase, so that a principal element lattice can be introduced or atoms in a target unit cell can be replaced by doping in the oxidation process of a coating layer, lattice distortion, vacancy or electron change of the outer layer of the atoms can be caused, transition of current carriers can be promoted, infrared absorption can be enhanced, and the thermal radiation capacity of the coating layer can be enhanced. The embodiment shows that the mass loss rate of the coating layer prepared from the composite powder is 6.37*10<-4 >, and the emissivity is 0.87.
本发明提供了一种二硼化铪‑碳化硅‑二硅化钽‑氧化钆复合粉体及其制备方法,属于复合粉体材料技术领域。本发明使用碳化硅和二硅化钽作为高温抗氧化性改性成分,在高温下氧化形成氧化硅玻璃相,起封填孔隙的作用;本发明使用氧化钆作为发射率改性成分,一方面,氧化钆能够增强氧化硅玻璃相的粘度,提高玻璃相保护层高温热稳定性的作用;另一方面,氧化钆作为高发射相,可以在涂层氧化过程中通过掺杂引入主元晶格或替换目标晶胞中的原子,可以导致原子外层的晶格畸变,空位或电子变化,促进载流子的跃迁,可以增强红外吸收,从而增强涂层的热辐射能力。实施例表明,本发明复合粉体制成的涂层的质量损失率为6.37×10‑4,发射率为0.87。
Hafnium diboride-silicon carbide-tantalum disilicide-gadolinium oxide composite powder and preparation method thereof
The invention provides hafnium diboride-silicon carbide-tantalum disilicide-gadolinium oxide composite powder and a preparation method thereof, and belongs to the technical field of composite powder materials. Silicon carbide and tantalum disilicide are used as high-temperature oxidation resistance modification components and are oxidized at high temperature to form a silicon oxide glass phase to play a role in sealing and filling pores; the gadolinium oxide is used as an emissivity modification component, on one hand, the gadolinium oxide can enhance the viscosity of a silica glass phase and improve the high-temperature thermal stability of a glass phase protective layer; and on the other hand, the gadolinium oxide is used as a high emission phase, so that a principal element lattice can be introduced or atoms in a target unit cell can be replaced by doping in the oxidation process of a coating layer, lattice distortion, vacancy or electron change of the outer layer of the atoms can be caused, transition of current carriers can be promoted, infrared absorption can be enhanced, and the thermal radiation capacity of the coating layer can be enhanced. The embodiment shows that the mass loss rate of the coating layer prepared from the composite powder is 6.37*10<-4 >, and the emissivity is 0.87.
本发明提供了一种二硼化铪‑碳化硅‑二硅化钽‑氧化钆复合粉体及其制备方法,属于复合粉体材料技术领域。本发明使用碳化硅和二硅化钽作为高温抗氧化性改性成分,在高温下氧化形成氧化硅玻璃相,起封填孔隙的作用;本发明使用氧化钆作为发射率改性成分,一方面,氧化钆能够增强氧化硅玻璃相的粘度,提高玻璃相保护层高温热稳定性的作用;另一方面,氧化钆作为高发射相,可以在涂层氧化过程中通过掺杂引入主元晶格或替换目标晶胞中的原子,可以导致原子外层的晶格畸变,空位或电子变化,促进载流子的跃迁,可以增强红外吸收,从而增强涂层的热辐射能力。实施例表明,本发明复合粉体制成的涂层的质量损失率为6.37×10‑4,发射率为0.87。
Hafnium diboride-silicon carbide-tantalum disilicide-gadolinium oxide composite powder and preparation method thereof
一种二硼化铪-碳化硅-二硅化钽-氧化钆复合粉体及其制备方法
LIU YANBO (Autor:in) / XIE MINGSHAO (Autor:in) / LIU SHAOPU (Autor:in) / WANG YIFAN (Autor:in)
15.02.2022
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
Europäisches Patentamt | 2022
|Hafnium diboride-tantalum disilicide composite powder and preparation method thereof
Europäisches Patentamt | 2022
|Preparation method of molybdenum disilicide/silicon carbide composite porous ceramic
Europäisches Patentamt | 2015
|Oxidation resistance of hafnium diboride—silicon carbide from 1400 to 2000 °C
British Library Online Contents | 2009
|Hafnium tantalum oxide ceramic powder as well as preparation method and application thereof
Europäisches Patentamt | 2023
|