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Medium-dielectric-constant high-temperature sintering microwave dielectric ceramic and preparation method thereof
The invention belongs to the field of electronic ceramics and manufacturing thereof, and particularly relates to a medium-dielectric-constant high-temperature sintering microwave dielectric ceramic and a preparation method thereof. The chemical expression of the microwave dielectric ceramic is Ba8Nb4Zr3O24, and the microwave dielectric ceramic is prepared by adopting a solid-phase sintering method. The sintering temperature range is 1530 to 1650 DEG C. Excellent microwave dielectric properties can be obtained at 1620 DEG C: epsilon r is equal to 32, Q * f is equal to 62151GHz, and tauf is equal to-27 ppm/DEG C. The preparation process is simple, the raw materials are low in price, and the prepared low-loss microwave dielectric ceramic has a wide application prospect in industry.
本发明属于电子陶瓷及其制造领域，特别涉及一种中介电常数高温烧结微波介质陶瓷及其制备方法。所述微波介质陶瓷的化学表达式为：Ba8Nb4Zr3O24，采用固相烧结法制备。其烧结温度范围为1530‑1650℃。在1620℃可以获得性能优异微波介电性能：εr＝32,Q×f＝62151GHz,τf＝‑27ppm/℃。本发明制备工艺简单，原料价格低廉，制备出的低损耗微波介质陶瓷在工业上具有广阔的应用前景。
Medium-dielectric-constant high-temperature sintering microwave dielectric ceramic and preparation method thereof
The invention belongs to the field of electronic ceramics and manufacturing thereof, and particularly relates to a medium-dielectric-constant high-temperature sintering microwave dielectric ceramic and a preparation method thereof. The chemical expression of the microwave dielectric ceramic is Ba8Nb4Zr3O24, and the microwave dielectric ceramic is prepared by adopting a solid-phase sintering method. The sintering temperature range is 1530 to 1650 DEG C. Excellent microwave dielectric properties can be obtained at 1620 DEG C: epsilon r is equal to 32, Q * f is equal to 62151GHz, and tauf is equal to-27 ppm/DEG C. The preparation process is simple, the raw materials are low in price, and the prepared low-loss microwave dielectric ceramic has a wide application prospect in industry.
本发明属于电子陶瓷及其制造领域，特别涉及一种中介电常数高温烧结微波介质陶瓷及其制备方法。所述微波介质陶瓷的化学表达式为：Ba8Nb4Zr3O24，采用固相烧结法制备。其烧结温度范围为1530‑1650℃。在1620℃可以获得性能优异微波介电性能：εr＝32,Q×f＝62151GHz,τf＝‑27ppm/℃。本发明制备工艺简单，原料价格低廉，制备出的低损耗微波介质陶瓷在工业上具有广阔的应用前景。
Medium-dielectric-constant high-temperature sintering microwave dielectric ceramic and preparation method thereof
一种中介电常数高温烧结微波介质陶瓷及其制备方法
LI HAO (Autor:in) / ZHANG PENGCHENG (Autor:in)
01.03.2022
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
| Europäisches Patentamt | 2023
| Europäisches Patentamt | 2022
| Europäisches Patentamt | 2024
Medium dielectric constant microwave dielectric ceramic and preparation method thereof
| Europäisches Patentamt | 2024
Medium dielectric constant microwave dielectric ceramic material and preparation method thereof
| Europäisches Patentamt | 2022