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Low-loss oxyfluoride microwave dielectric ceramic and preparation method thereof
The invention relates to the technical field of electronic information materials and devices thereof, in particular to low-loss oxyfluoride microwave dielectric ceramic and a preparation method thereof. The expression formula of the microwave dielectric ceramic is MgTiO2F2. In the invention, the oxyfluoride-based microwave dielectric ceramic with stable and single phase and no second phase is provided, the relative dielectric constant epsilon r of the oxyfluoride-based microwave dielectric ceramic is 13.5-14.7, the quality factor Qf is 132850-150500 GHz, and the temperature coefficient of resonance frequency is-42 to-56 ppm/DEG C. The microwave dielectric ceramic disclosed by the invention has a relatively low relative dielectric constant and a relatively high quality factor, and has a very wide application prospect in passive devices of microwave communication systems.
本发明涉及电子信息材料及其器件技术领域，尤其涉及一种低损耗氟氧化物微波介质陶瓷及其制备方法。这种微波介质陶瓷的表达式为MgTiO2F2。本申请中，提供了一种物相稳定单一，无第二相存在的氟氧化物基微波介质陶瓷，其相对介电常数εr为13.5～14.7，品质因数Qf为132850～150500GHz，谐振频率温度系数为–42～–56ppm/℃。本申请的微波介质陶瓷兼具较低相对介电常数以及较高的品质因数，在微波通讯系统无源器件中有非常广泛的应用前景。
Low-loss oxyfluoride microwave dielectric ceramic and preparation method thereof
The invention relates to the technical field of electronic information materials and devices thereof, in particular to low-loss oxyfluoride microwave dielectric ceramic and a preparation method thereof. The expression formula of the microwave dielectric ceramic is MgTiO2F2. In the invention, the oxyfluoride-based microwave dielectric ceramic with stable and single phase and no second phase is provided, the relative dielectric constant epsilon r of the oxyfluoride-based microwave dielectric ceramic is 13.5-14.7, the quality factor Qf is 132850-150500 GHz, and the temperature coefficient of resonance frequency is-42 to-56 ppm/DEG C. The microwave dielectric ceramic disclosed by the invention has a relatively low relative dielectric constant and a relatively high quality factor, and has a very wide application prospect in passive devices of microwave communication systems.
本发明涉及电子信息材料及其器件技术领域，尤其涉及一种低损耗氟氧化物微波介质陶瓷及其制备方法。这种微波介质陶瓷的表达式为MgTiO2F2。本申请中，提供了一种物相稳定单一，无第二相存在的氟氧化物基微波介质陶瓷，其相对介电常数εr为13.5～14.7，品质因数Qf为132850～150500GHz，谐振频率温度系数为–42～–56ppm/℃。本申请的微波介质陶瓷兼具较低相对介电常数以及较高的品质因数，在微波通讯系统无源器件中有非常广泛的应用前景。
Low-loss oxyfluoride microwave dielectric ceramic and preparation method thereof
一种低损耗氟氧化物微波介质陶瓷及其制备方法
LIU BING (Autor:in) / LIN FENGLI (Autor:in) / ZHOU MENGFEI (Autor:in) / SHA KE (Autor:in) / HUANG YUHUI (Autor:in) / SONG KAIXIN (Autor:in)
18.03.2022
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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