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Precursor converted silicon carbide ceramic and preparation method thereof
The invention provides precursor converted silicon carbide ceramic and a preparation method thereof. The method comprises the step of preparing the silicon carbide ceramic powder and the silicon carbide ceramic precursor by blending and pressureless sintering the following raw materials in percentage by mass: 60-80% of silicon carbide ceramic powder and 20-40% of silicon carbide ceramic precursor. A common silicon carbide ceramic material is subjected to pressure forming sintering or hot pressing sintering, the pressurizing pressure is large, the sintering temperature is high, the requirement for equipment is high, the process is complex, and the cost is high. Compared with a traditional silicon carbide ceramic preparation method, the preparation method is simple in process, low in sintering temperature, low in equipment requirement and low in cost.
本发明提供了一种先驱体转化碳化硅陶瓷及其制备方法。所述方法包括以如下质量百分比的原料通过共混无压烧结进行制备:60%‑80%的碳化硅陶瓷粉以及20%‑40%的碳化硅陶瓷先驱体。一般的碳化硅陶瓷材料均采用加压成型烧结或热压烧结进行,加压压力大烧结温度高,对设备的要求较高,工艺复杂成本昂贵。相比较传统碳化硅陶瓷制备方法,本发明工艺简单,烧结温度低,对设备要求低,成本低廉。
Precursor converted silicon carbide ceramic and preparation method thereof
The invention provides precursor converted silicon carbide ceramic and a preparation method thereof. The method comprises the step of preparing the silicon carbide ceramic powder and the silicon carbide ceramic precursor by blending and pressureless sintering the following raw materials in percentage by mass: 60-80% of silicon carbide ceramic powder and 20-40% of silicon carbide ceramic precursor. A common silicon carbide ceramic material is subjected to pressure forming sintering or hot pressing sintering, the pressurizing pressure is large, the sintering temperature is high, the requirement for equipment is high, the process is complex, and the cost is high. Compared with a traditional silicon carbide ceramic preparation method, the preparation method is simple in process, low in sintering temperature, low in equipment requirement and low in cost.
本发明提供了一种先驱体转化碳化硅陶瓷及其制备方法。所述方法包括以如下质量百分比的原料通过共混无压烧结进行制备:60%‑80%的碳化硅陶瓷粉以及20%‑40%的碳化硅陶瓷先驱体。一般的碳化硅陶瓷材料均采用加压成型烧结或热压烧结进行,加压压力大烧结温度高,对设备的要求较高,工艺复杂成本昂贵。相比较传统碳化硅陶瓷制备方法,本发明工艺简单,烧结温度低,对设备要求低,成本低廉。
Precursor converted silicon carbide ceramic and preparation method thereof
一种先驱体转化碳化硅陶瓷及其制备方法
WEN GUANGWU (Autor:in) / YANG GUOWEI (Autor:in) / WANG ZHEN (Autor:in)
18.03.2022
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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