Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Vacuum pouring process for silicon carbide ceramics
The invention relates to the technical field of silicon carbide ceramic production, in particular to a silicon carbide ceramic vacuum pouring process. Comprising the following steps: S1, weighing ingredients; silicon carbide is an inorganic substance, has a chemical formula of SiC, is formed by smelting quartz sand, petroleum coke, sawdust and table salt as raw materials at high temperature through a resistance furnace, and has the advantages of stable chemical properties, high heat conductivity coefficient, small thermal expansion coefficient and good wear resistance, and the excellent properties of SiC ceramic are closely related to the unique structure of the SiC ceramic. SiC is a compound with very strong covalent bonds, the furnace core is placed on a base plate made of ingredients, the middle of the base plate slightly protrudes to adapt to collapse occurring in the furnace service process, the mixed ingredients are laid on the upper portion of the furnace core, non-quality materials or unreacted materials are also placed on the upper portion of the furnace core while the mixed ingredients are laid on the upper portion of the furnace core, and the state that the middle is high and the two sides are low is formed after the furnace is installed. The reaction effect in the furnace is improved, products obtained after demolding are intensively cured, the curing degree is improved, and internal stress is released, and the fourth step is post-treatment, and product pouring gates, mold closing seams and other defects are cleaned.
本发明涉及碳化硅陶瓷生产技术领域，尤其涉及一种碳化硅陶瓷真空浇筑工艺。包括S1：配料称量；碳化硅是一种无机物，化学式为SiC，是用石英砂、石油焦、木屑和食盐作为原料通过电阻炉高温冶炼而成，碳化硅化学性能稳定、导热系数高、热膨胀系数小、耐磨性能好，SiC陶瓷的优异性能与其独特结构密切相关。SiC是共价键很强的化合物，通过炉芯放在配料制成的底盘上，中间略凸起以适应在炉役过程中出现的塌陷，炉芯上部铺放混好的配料，炉芯上部铺放混好的配料同时也放非品质料或生产未反应料，炉子装好后形成中间高、两边低的状态，提高炉内反应效果，脱模后的产品集中固化，提高固化度，释放内应力，第四步为后处理，清理产品浇口，合模缝及其它缺陷。
Vacuum pouring process for silicon carbide ceramics
The invention relates to the technical field of silicon carbide ceramic production, in particular to a silicon carbide ceramic vacuum pouring process. Comprising the following steps: S1, weighing ingredients; silicon carbide is an inorganic substance, has a chemical formula of SiC, is formed by smelting quartz sand, petroleum coke, sawdust and table salt as raw materials at high temperature through a resistance furnace, and has the advantages of stable chemical properties, high heat conductivity coefficient, small thermal expansion coefficient and good wear resistance, and the excellent properties of SiC ceramic are closely related to the unique structure of the SiC ceramic. SiC is a compound with very strong covalent bonds, the furnace core is placed on a base plate made of ingredients, the middle of the base plate slightly protrudes to adapt to collapse occurring in the furnace service process, the mixed ingredients are laid on the upper portion of the furnace core, non-quality materials or unreacted materials are also placed on the upper portion of the furnace core while the mixed ingredients are laid on the upper portion of the furnace core, and the state that the middle is high and the two sides are low is formed after the furnace is installed. The reaction effect in the furnace is improved, products obtained after demolding are intensively cured, the curing degree is improved, and internal stress is released, and the fourth step is post-treatment, and product pouring gates, mold closing seams and other defects are cleaned.
本发明涉及碳化硅陶瓷生产技术领域，尤其涉及一种碳化硅陶瓷真空浇筑工艺。包括S1：配料称量；碳化硅是一种无机物，化学式为SiC，是用石英砂、石油焦、木屑和食盐作为原料通过电阻炉高温冶炼而成，碳化硅化学性能稳定、导热系数高、热膨胀系数小、耐磨性能好，SiC陶瓷的优异性能与其独特结构密切相关。SiC是共价键很强的化合物，通过炉芯放在配料制成的底盘上，中间略凸起以适应在炉役过程中出现的塌陷，炉芯上部铺放混好的配料，炉芯上部铺放混好的配料同时也放非品质料或生产未反应料，炉子装好后形成中间高、两边低的状态，提高炉内反应效果，脱模后的产品集中固化，提高固化度，释放内应力，第四步为后处理，清理产品浇口，合模缝及其它缺陷。
Vacuum pouring process for silicon carbide ceramics
一种碳化硅陶瓷真空浇筑工艺
XU FANGYUAN (Autor:in) / YANG JIAN (Autor:in) / ZHENG PENG (Autor:in) / TAN CHENG (Autor:in)
22.04.2022
Patent
Elektronische Ressource
Chinesisch
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