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Silicon nitride ceramic substrate and method for manufacturing same
The invention discloses a silicon nitride ceramic substrate which comprises silicon nitride hollow spheres accounting for 50-90% of the total mass of the silicon nitride ceramic substrate, and the balance of additives and/or auxiliaries and impurities which cannot be removed. According to the silicon nitride ceramic substrate disclosed by the invention, the silicon nitride hollow sphere is arranged as a main material, and the silicon nitride hollow sphere is hollow, so that the silicon nitride ceramic substrate has good thermal conductivity, relatively low density and relatively low relative dielectric constant, meanwhile, the preparation process is simple, and mass production is easy. The invention also discloses a manufacturing method of the silicon nitride ceramic substrate.
本发明公开了一种氮化硅陶瓷基板，包括按质量分数占氮化硅陶瓷基板总体质量50%‑90%的氮化硅空心球体，剩余为添加剂和/或助剂以及无法去除的杂质。本发明氮化硅陶瓷基板，通过将氮化硅空心球体设置为主要材料，因其空心从而具备良好的导热率、密度较小和较低的相对介电常数，同时制备工艺简单，易于大批量生产。本发明还公开了上述氮化硅陶瓷基板的制造方法。
Silicon nitride ceramic substrate and method for manufacturing same
The invention discloses a silicon nitride ceramic substrate which comprises silicon nitride hollow spheres accounting for 50-90% of the total mass of the silicon nitride ceramic substrate, and the balance of additives and/or auxiliaries and impurities which cannot be removed. According to the silicon nitride ceramic substrate disclosed by the invention, the silicon nitride hollow sphere is arranged as a main material, and the silicon nitride hollow sphere is hollow, so that the silicon nitride ceramic substrate has good thermal conductivity, relatively low density and relatively low relative dielectric constant, meanwhile, the preparation process is simple, and mass production is easy. The invention also discloses a manufacturing method of the silicon nitride ceramic substrate.
本发明公开了一种氮化硅陶瓷基板，包括按质量分数占氮化硅陶瓷基板总体质量50%‑90%的氮化硅空心球体，剩余为添加剂和/或助剂以及无法去除的杂质。本发明氮化硅陶瓷基板，通过将氮化硅空心球体设置为主要材料，因其空心从而具备良好的导热率、密度较小和较低的相对介电常数，同时制备工艺简单，易于大批量生产。本发明还公开了上述氮化硅陶瓷基板的制造方法。
Silicon nitride ceramic substrate and method for manufacturing same
氮化硅陶瓷基板及其制造方法
XING MENGJIANG (Autor:in) / YANG XIAODONG (Autor:in) / DAI CHUANXIANG (Autor:in) / XING MENGDAO (Autor:in) / LIU YONGHONG (Autor:in)
29.04.2022
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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