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Method for preparing electronic phase change ceramic material by doping vanadium oxide with transition metal oxide
The invention discloses a preparation method of a vanadium oxide-doped electronic phase change ceramic material, and belongs to the field of electronic ceramic materials and sensitive resistors. Vanadium dioxide and doped element oxide powder are subjected to an in-situ solid-phase reaction in a non-equilibrium state through a discharge sintering technology under current breakdown among the oxide powder and are co-sintered into ceramic, so that in-situ doping of vanadium oxide is realized during sintering. By regulating and controlling the morphology, the particle size, the relative content and the sintering condition of the vanadium oxide matrix powder and the doped precursor powder, the method can realize flexible regulation and control and accurate design of the types and the doping amount of the doped elements in the doped vanadium oxide ceramic material; and wide-range design and adjustment of the phase-change temperature and room-temperature resistivity of the prepared vanadium oxide-doped ceramic material metal insulator are further realized. The material is applied to the aspects of thermal switches, temperature sensing, surge current suppression, thermochromic coatings, infrared camouflage coatings, thermal camouflage coatings and the like.
一种掺杂氧化钒电子相变陶瓷材料的制备方法，电子陶瓷材料与敏感电阻器件领域。通过氧化物粉体间由电流击穿下的放电烧结技术将二氧化钒与掺杂元素氧化物粉体间在非平衡状态下发生原位固相反应并共烧结成陶瓷，从而在烧结中实现对氧化钒原位掺杂。本发明通过对氧化钒母体粉体、掺杂前驱体粉体的形貌、粒径、相对含量以及烧结条件的调控，该方法能够实现对掺杂氧化钒陶瓷材料中的掺杂元素种类、掺杂量进行灵活调控与精准设计，并进一步实现对所制备掺杂氧化钒陶瓷材料金属绝缘体相变温度、室温电阻率的宽范围设计与调节。本发明材料应用于热开关、温度传感、浪涌电流抑制、热致变色涂层、红外伪装涂层、热伪装涂层等方面。
Method for preparing electronic phase change ceramic material by doping vanadium oxide with transition metal oxide
The invention discloses a preparation method of a vanadium oxide-doped electronic phase change ceramic material, and belongs to the field of electronic ceramic materials and sensitive resistors. Vanadium dioxide and doped element oxide powder are subjected to an in-situ solid-phase reaction in a non-equilibrium state through a discharge sintering technology under current breakdown among the oxide powder and are co-sintered into ceramic, so that in-situ doping of vanadium oxide is realized during sintering. By regulating and controlling the morphology, the particle size, the relative content and the sintering condition of the vanadium oxide matrix powder and the doped precursor powder, the method can realize flexible regulation and control and accurate design of the types and the doping amount of the doped elements in the doped vanadium oxide ceramic material; and wide-range design and adjustment of the phase-change temperature and room-temperature resistivity of the prepared vanadium oxide-doped ceramic material metal insulator are further realized. The material is applied to the aspects of thermal switches, temperature sensing, surge current suppression, thermochromic coatings, infrared camouflage coatings, thermal camouflage coatings and the like.
一种掺杂氧化钒电子相变陶瓷材料的制备方法，电子陶瓷材料与敏感电阻器件领域。通过氧化物粉体间由电流击穿下的放电烧结技术将二氧化钒与掺杂元素氧化物粉体间在非平衡状态下发生原位固相反应并共烧结成陶瓷，从而在烧结中实现对氧化钒原位掺杂。本发明通过对氧化钒母体粉体、掺杂前驱体粉体的形貌、粒径、相对含量以及烧结条件的调控，该方法能够实现对掺杂氧化钒陶瓷材料中的掺杂元素种类、掺杂量进行灵活调控与精准设计，并进一步实现对所制备掺杂氧化钒陶瓷材料金属绝缘体相变温度、室温电阻率的宽范围设计与调节。本发明材料应用于热开关、温度传感、浪涌电流抑制、热致变色涂层、红外伪装涂层、热伪装涂层等方面。
Method for preparing electronic phase change ceramic material by doping vanadium oxide with transition metal oxide
氧化钒掺杂过渡金属氧化物制备电子相变陶瓷材料的方法
CHEN JIKUN (Autor:in) / ZHOU XUANCHI (Autor:in) / ZHANG XIULAN (Autor:in) / JIANG YONG (Autor:in)
27.05.2022
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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