Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation technology of high-remanence M-type barium ferrite for self-biased circulator
The invention provides a high-remanence M-type hexagonal ferrite for a self-biased ferrite substrate and a preparation method of the high-remanence M-type hexagonal ferrite. The high-remanence M-type barium ferrite material is finally prepared by preparing a green body through proper ball milling and pre-sintering processes in combination with a wet magnetic field forming process and combining with an optimized sintering process. The method is characterized in that the saturation magnetization intensity is about 4300 Gs, the residual magnetism is about 3500 Gs, and the coercive force is about 2300-2400 Oe.
本发明提供了一种自偏置铁氧体基板用高剩磁M型六角铁氧体及制备方法。通过适宜的球磨、预烧工艺，结合湿法磁场成型工艺制备生坯，再结合优化的烧结工艺，最终制备一种高剩磁M型钡铁氧体材料。其特征在于，饱和磁化强度约4300Gs，剩磁约3500Gs，矫顽力约2300～2400Oe。
Preparation technology of high-remanence M-type barium ferrite for self-biased circulator
The invention provides a high-remanence M-type hexagonal ferrite for a self-biased ferrite substrate and a preparation method of the high-remanence M-type hexagonal ferrite. The high-remanence M-type barium ferrite material is finally prepared by preparing a green body through proper ball milling and pre-sintering processes in combination with a wet magnetic field forming process and combining with an optimized sintering process. The method is characterized in that the saturation magnetization intensity is about 4300 Gs, the residual magnetism is about 3500 Gs, and the coercive force is about 2300-2400 Oe.
本发明提供了一种自偏置铁氧体基板用高剩磁M型六角铁氧体及制备方法。通过适宜的球磨、预烧工艺，结合湿法磁场成型工艺制备生坯，再结合优化的烧结工艺，最终制备一种高剩磁M型钡铁氧体材料。其特征在于，饱和磁化强度约4300Gs，剩磁约3500Gs，矫顽力约2300～2400Oe。
Preparation technology of high-remanence M-type barium ferrite for self-biased circulator
自偏置环行器用高剩磁M型钡铁氧体制备技术
ZHANG TAO (Autor:in) / JIANG XIAONA (Autor:in) / YU ZHONG (Autor:in) / WU CHUANJIAN (Autor:in) / SUN KE (Autor:in) / LAN ZHONGWEN (Autor:in)
07.06.2022
Patent
Elektronische Ressource
Chinesisch
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