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Silicon carbide ceramic and preparation method thereof
The invention relates to the technical field of silicon carbide ceramics, and provides a silicon carbide ceramic and a preparation method thereof. The preparation method of the silicon carbide ceramic comprises the steps of raw material preparation, green body preparation, reactive sintering and secondary sintering silicon removal, and the content of silicon carbide in a green body is increased through reactive sintering; the preparation method comprises the following steps: preparing a green body, then embedding the green body into carbon powder for secondary sintering to remove silicon, and evaporating and migrating silicon in silicon carbide into external carbon of the silicon carbide, so that free silicon in the silicon carbide is eliminated, and finally, the silicon carbide ceramic with high purity and certain porosity is obtained. And the prepared silicon carbide ceramic is low in porosity, high in strength and better in high temperature resistance.
本发明涉及碳化硅陶瓷技术领域,本发明提供了一种碳化硅陶瓷及其制备方法。该碳化硅陶瓷制备方法包括准备原料、生坯制备、反应烧结和二次烧结除硅步骤,本发明通过先进行反应烧结,提高了坯体中碳化硅的含量;然后通过将坯体埋入碳粉中进行二次烧结除硅,碳化硅中的硅蒸发,迁移到碳化硅外部碳中,从而使得碳化硅中的自由硅得以消除,最终获得高纯、一定气孔率的碳化硅陶瓷,此种工艺相比传统重结晶碳化硅制备工艺烧结温度要低很多,而且所制备出的碳化硅陶瓷孔隙率低,强度高,耐高温性能更好。
Silicon carbide ceramic and preparation method thereof
The invention relates to the technical field of silicon carbide ceramics, and provides a silicon carbide ceramic and a preparation method thereof. The preparation method of the silicon carbide ceramic comprises the steps of raw material preparation, green body preparation, reactive sintering and secondary sintering silicon removal, and the content of silicon carbide in a green body is increased through reactive sintering; the preparation method comprises the following steps: preparing a green body, then embedding the green body into carbon powder for secondary sintering to remove silicon, and evaporating and migrating silicon in silicon carbide into external carbon of the silicon carbide, so that free silicon in the silicon carbide is eliminated, and finally, the silicon carbide ceramic with high purity and certain porosity is obtained. And the prepared silicon carbide ceramic is low in porosity, high in strength and better in high temperature resistance.
本发明涉及碳化硅陶瓷技术领域,本发明提供了一种碳化硅陶瓷及其制备方法。该碳化硅陶瓷制备方法包括准备原料、生坯制备、反应烧结和二次烧结除硅步骤,本发明通过先进行反应烧结,提高了坯体中碳化硅的含量;然后通过将坯体埋入碳粉中进行二次烧结除硅,碳化硅中的硅蒸发,迁移到碳化硅外部碳中,从而使得碳化硅中的自由硅得以消除,最终获得高纯、一定气孔率的碳化硅陶瓷,此种工艺相比传统重结晶碳化硅制备工艺烧结温度要低很多,而且所制备出的碳化硅陶瓷孔隙率低,强度高,耐高温性能更好。
Silicon carbide ceramic and preparation method thereof
一种碳化硅陶瓷及其制备方法
XIE FANGMIN (Autor:in) / XIONG LIJUN (Autor:in) / SHEN YUN (Autor:in) / YU MINGLIANG (Autor:in) / ZHANG BIYING (Autor:in) / WU GUOPING (Autor:in) / HONG YUZHE (Autor:in) / QI MINGJIE (Autor:in) / YANG LIANJIANG (Autor:in) / FANG YOUXIANG (Autor:in)
07.06.2022
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
Europäisches Patentamt | 2023
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|Silicon carbide ceramic and preparation method thereof
Europäisches Patentamt | 2024
|Silicon carbide ceramic and preparation method thereof
Europäisches Patentamt | 2024
|Silicon carbide ceramic and preparation method thereof
Europäisches Patentamt | 2023
|