Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Microwave sintering method of silicon carbide preform
The invention discloses a microwave sintering method of a silicon carbide preform. The microwave sintering method comprises the following steps: S1, placing the silicon carbide preform in a microwave sintering device; s2, the temperature is increased to 300-500 DEG C at the average speed of 5-8 DEG C/min for microwave dewaxing, heat preservation is conducted till complete dewaxing is achieved, and a dewaxed silicon carbide prefabricated part is obtained; and S3, the dewaxed silicon carbide prefabricated part continues to be subjected to microwave sintering, the sintering temperature is 500-800 DEG C, and heat preservation is conducted for 1.5-3 h. The high dielectric constant characteristic of silicon carbide is utilized, the temperature is rapidly increased in the environment with direct microwave heating as a main mode, heat is transferred to the low dielectric constant binder and the organic matter gel, heat preservation is conducted after the dewaxing and degumming temperature is reached, and heat preservation sintering is conducted after the temperature is increased to the sintering temperature after dewaxing and degumming are completed, so that the sintering efficiency is greatly improved, and meanwhile the sintering cost is reduced. And the silicon carbide prefabricated member with high strength and uniform structure is prepared.
本发明公开了一种碳化硅预制件的微波烧结方法，包括以下步骤：S1、将碳化硅预制件置于微波烧结装置中；S2、以5～8℃/min的平均速率升温至300～500℃进行微波脱蜡，保温至完全脱蜡，得到脱蜡碳化硅预制件；S3、脱蜡碳化硅预制件继续微波烧结，烧结温度为500℃～800℃，保温1.5～3h。本发明利用碳化硅自身的高介电常数特性，在微波直接加热为主的环境下快速升温，并将热量传递给低介电常数粘结剂和有机物凝胶，在达到脱蜡排胶温度后保温，脱蜡排胶完成后升温至烧结温度后保温烧结，大大提高了烧结效率的同时，制备出了强度高且结构均一的碳化硅预制件。
Microwave sintering method of silicon carbide preform
The invention discloses a microwave sintering method of a silicon carbide preform. The microwave sintering method comprises the following steps: S1, placing the silicon carbide preform in a microwave sintering device; s2, the temperature is increased to 300-500 DEG C at the average speed of 5-8 DEG C/min for microwave dewaxing, heat preservation is conducted till complete dewaxing is achieved, and a dewaxed silicon carbide prefabricated part is obtained; and S3, the dewaxed silicon carbide prefabricated part continues to be subjected to microwave sintering, the sintering temperature is 500-800 DEG C, and heat preservation is conducted for 1.5-3 h. The high dielectric constant characteristic of silicon carbide is utilized, the temperature is rapidly increased in the environment with direct microwave heating as a main mode, heat is transferred to the low dielectric constant binder and the organic matter gel, heat preservation is conducted after the dewaxing and degumming temperature is reached, and heat preservation sintering is conducted after the temperature is increased to the sintering temperature after dewaxing and degumming are completed, so that the sintering efficiency is greatly improved, and meanwhile the sintering cost is reduced. And the silicon carbide prefabricated member with high strength and uniform structure is prepared.
本发明公开了一种碳化硅预制件的微波烧结方法，包括以下步骤：S1、将碳化硅预制件置于微波烧结装置中；S2、以5～8℃/min的平均速率升温至300～500℃进行微波脱蜡，保温至完全脱蜡，得到脱蜡碳化硅预制件；S3、脱蜡碳化硅预制件继续微波烧结，烧结温度为500℃～800℃，保温1.5～3h。本发明利用碳化硅自身的高介电常数特性，在微波直接加热为主的环境下快速升温，并将热量传递给低介电常数粘结剂和有机物凝胶，在达到脱蜡排胶温度后保温，脱蜡排胶完成后升温至烧结温度后保温烧结，大大提高了烧结效率的同时，制备出了强度高且结构均一的碳化硅预制件。
Microwave sintering method of silicon carbide preform
一种碳化硅预制件的微波烧结方法
TIAN FEIFAN (Autor:in) / YU CHUIYOU (Autor:in) / HE FANG (Autor:in) / HU JUAN (Autor:in) / SONG MANXIN (Autor:in) / ZENG QIANGMING (Autor:in)
16.08.2022
Patent
Elektronische Ressource
Chinesisch
| Europäisches Patentamt | 2015
| Europäisches Patentamt | 2020
| Europäisches Patentamt | 2019
Microwave Sintering of Alumina-Silicon Carbide Nanocomposites
| British Library Online Contents | 2007