Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Process for manufacturing silicon carbide coated bodies
The present invention relates to a new process for manufacturing SiC-coated bodies by depositing silicon carbide (SiC) on a graphite substrate using dimethyldichlorosilane (DMS) as a source of silane in a chemical vapor deposition process. Another aspect of the invention relates to a novel silicon carbide coated body obtainable by the novel process of the invention and to the use of said silicon carbide coated body for the manufacture of articles for high temperature applications, susceptors and reactors, semiconductor materials and wafers.
本发明涉及一种通过在化学气相沉积方法中使用二甲基二氯硅烷(DMS)作为硅烷源在石墨基板上沉积碳化硅(SiC)来制造涂覆SiC的主体的新的工艺。本发明的另一方面涉及可通过本发明的新的工艺获得的新的涂覆碳化硅的主体，以及涉及所述涂覆碳化硅的主体用于制造用于高温应用、基座和反应器、半导体材料以及晶片的制品的用途。
Process for manufacturing silicon carbide coated bodies
The present invention relates to a new process for manufacturing SiC-coated bodies by depositing silicon carbide (SiC) on a graphite substrate using dimethyldichlorosilane (DMS) as a source of silane in a chemical vapor deposition process. Another aspect of the invention relates to a novel silicon carbide coated body obtainable by the novel process of the invention and to the use of said silicon carbide coated body for the manufacture of articles for high temperature applications, susceptors and reactors, semiconductor materials and wafers.
本发明涉及一种通过在化学气相沉积方法中使用二甲基二氯硅烷(DMS)作为硅烷源在石墨基板上沉积碳化硅(SiC)来制造涂覆SiC的主体的新的工艺。本发明的另一方面涉及可通过本发明的新的工艺获得的新的涂覆碳化硅的主体，以及涉及所述涂覆碳化硅的主体用于制造用于高温应用、基座和反应器、半导体材料以及晶片的制品的用途。
Process for manufacturing silicon carbide coated bodies
用于制造涂覆碳化硅的主体的工艺
GUERCIO PETER J (Autor:in) / WESTPHAL PAUL (Autor:in)
18.11.2022
Patent
Elektronische Ressource
Chinesisch
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