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Preparation method of large-size hexagonal boron nitride and large-size hexagonal boron nitride
The invention relates to a preparation method of large-size hexagonal boron nitride and the large-size hexagonal boron nitride.The preparation method of the large-size hexagonal boron nitride comprises the steps that a hexagonal boron nitride seed crystal is prepared, then iterative growth is conducted on the basis of the hexagonal boron nitride seed crystal, and the large-size hexagonal boron nitride is prepared. According to the method, an iterative growth mode is adopted, growth continues on the basis of the prepared hexagonal boron nitride seed crystal, and finally large-size hexagonal boron nitride is obtained; the quality stability of the prepared large-size hexagonal boron nitride crystal grains is ensured, so that the large-size hexagonal boron nitride can meet the market demand of a high-thermal-conductivity low-dielectric-insulation boron nitride composite material; the hexagonal boron nitride seed crystal is continuously grown as a growth basis, so that the nucleation energy is reduced, the nucleation temperature of the large-size hexagonal boron nitride is reduced, the energy consumption in the production process is further reduced, and the preparation method of the large-size hexagonal boron nitride is low in operation difficulty, energy-saving and efficient.
本发明涉及一种大尺寸六方氮化硼的制备方法以及大尺寸六方氮化硼,所述大尺寸六方氮化硼的制备方法包括步骤:制备六方氮化硼晶种,然后在所述六方氮化硼晶种的基础上迭代生长,制得大尺寸六方氮化硼。本发明采用迭代生长的方式,在制得的六方氮化硼晶种的基础上继续生长,最终得到大尺寸的六方氮化硼;保证了制得的大尺寸六方氮化硼晶粒的质量稳定性,使得大尺寸六方氮化硼能够满足高导热低介电绝缘氮化硼复合材料的市场需求;以所述六方氮化硼晶种为生长基础继续生长,降低了形核能,降低了大尺寸六方氮化硼形核的温度,进而降低了生产过程中的能量消耗,使得本发明所述大尺寸六方氮化硼的制备方法操作难度低且节能高效。
Preparation method of large-size hexagonal boron nitride and large-size hexagonal boron nitride
The invention relates to a preparation method of large-size hexagonal boron nitride and the large-size hexagonal boron nitride.The preparation method of the large-size hexagonal boron nitride comprises the steps that a hexagonal boron nitride seed crystal is prepared, then iterative growth is conducted on the basis of the hexagonal boron nitride seed crystal, and the large-size hexagonal boron nitride is prepared. According to the method, an iterative growth mode is adopted, growth continues on the basis of the prepared hexagonal boron nitride seed crystal, and finally large-size hexagonal boron nitride is obtained; the quality stability of the prepared large-size hexagonal boron nitride crystal grains is ensured, so that the large-size hexagonal boron nitride can meet the market demand of a high-thermal-conductivity low-dielectric-insulation boron nitride composite material; the hexagonal boron nitride seed crystal is continuously grown as a growth basis, so that the nucleation energy is reduced, the nucleation temperature of the large-size hexagonal boron nitride is reduced, the energy consumption in the production process is further reduced, and the preparation method of the large-size hexagonal boron nitride is low in operation difficulty, energy-saving and efficient.
本发明涉及一种大尺寸六方氮化硼的制备方法以及大尺寸六方氮化硼,所述大尺寸六方氮化硼的制备方法包括步骤:制备六方氮化硼晶种,然后在所述六方氮化硼晶种的基础上迭代生长,制得大尺寸六方氮化硼。本发明采用迭代生长的方式,在制得的六方氮化硼晶种的基础上继续生长,最终得到大尺寸的六方氮化硼;保证了制得的大尺寸六方氮化硼晶粒的质量稳定性,使得大尺寸六方氮化硼能够满足高导热低介电绝缘氮化硼复合材料的市场需求;以所述六方氮化硼晶种为生长基础继续生长,降低了形核能,降低了大尺寸六方氮化硼形核的温度,进而降低了生产过程中的能量消耗,使得本发明所述大尺寸六方氮化硼的制备方法操作难度低且节能高效。
Preparation method of large-size hexagonal boron nitride and large-size hexagonal boron nitride
大尺寸六方氮化硼的制备方法以及大尺寸六方氮化硼
TIAN ZHAOBO (Autor:in) / LI HAONAN (Autor:in) / ZENG HANG (Autor:in)
20.12.2022
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
Rapid preparation method of large-area hexagonal boron nitride film
Europäisches Patentamt | 2023
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