Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Silicon nitride heat conduction substrate and preparation method thereof
The invention discloses a silicon nitride heat-conducting substrate and a preparation method thereof, relates to the technical field of semiconductor devices, and aims at solving the problem of high heat-conducting property of the silicon nitride heat-conducting substrate and realizing high strength and high heat-conducting property of silicon nitride through new raw materials and a new preparation method. The preparation method comprises the following specific steps: adding magnesium silicon nitride, yttrium hydride, beta-Si3N4 seed crystal and alpha-Si3N4 powder into a ball-milling tank according to a target ratio, taking absolute ethyl alcohol as a medium, completing ball-milling mixing, drying and granulation, and preparing the silicon nitride heat-conducting substrate through two modes of tape casting air pressure and hot pressed sintering. According to the silicon nitride heat conduction substrate, the heat conduction performance is larger than or equal to 80 W (m.K) <-1 >, the bending strength reaches 850 MPa, the process is simple, and the silicon nitride heat conduction substrate is suitable for preparation of related silicon nitride materials such as high-heat-conduction silicon nitride, high-density silicon nitride and high-hardness silicon nitride and product production and can be used for preparing an electric automobile inverter (IGBT) and an electronic packaging device.
本发明公开了一种氮化硅导热基板及其制备方法，涉及半导体器件技术领域，针对解决氮化硅导热基板高导热性能问题，通过新的原料和新制备方法实现氮化硅的高强高导热性能。具体步骤如下：将氮化硅镁、氢化钇、β‑Si3N4晶种和α‑Si3N4粉体按目标配比加入到球磨罐中，将无水乙醇作为介质，完成球磨混料、烘干、造粒，通过流延气压和热压烧结两种方式制备氮化硅导热基板。本发明的氮化硅导热基板，不仅导热性能达到≥80 W·(m·K)‑1，抗弯强度达到850MPa，且工艺简单，适用于高导热氮化硅、高致密度氮化硅和高硬度氮化硅等相关氮化硅材料制备和产品生产，可用于制备电动汽车逆变器（IGBT）及电子封装器件。
Silicon nitride heat conduction substrate and preparation method thereof
The invention discloses a silicon nitride heat-conducting substrate and a preparation method thereof, relates to the technical field of semiconductor devices, and aims at solving the problem of high heat-conducting property of the silicon nitride heat-conducting substrate and realizing high strength and high heat-conducting property of silicon nitride through new raw materials and a new preparation method. The preparation method comprises the following specific steps: adding magnesium silicon nitride, yttrium hydride, beta-Si3N4 seed crystal and alpha-Si3N4 powder into a ball-milling tank according to a target ratio, taking absolute ethyl alcohol as a medium, completing ball-milling mixing, drying and granulation, and preparing the silicon nitride heat-conducting substrate through two modes of tape casting air pressure and hot pressed sintering. According to the silicon nitride heat conduction substrate, the heat conduction performance is larger than or equal to 80 W (m.K) <-1 >, the bending strength reaches 850 MPa, the process is simple, and the silicon nitride heat conduction substrate is suitable for preparation of related silicon nitride materials such as high-heat-conduction silicon nitride, high-density silicon nitride and high-hardness silicon nitride and product production and can be used for preparing an electric automobile inverter (IGBT) and an electronic packaging device.
本发明公开了一种氮化硅导热基板及其制备方法，涉及半导体器件技术领域，针对解决氮化硅导热基板高导热性能问题，通过新的原料和新制备方法实现氮化硅的高强高导热性能。具体步骤如下：将氮化硅镁、氢化钇、β‑Si3N4晶种和α‑Si3N4粉体按目标配比加入到球磨罐中，将无水乙醇作为介质，完成球磨混料、烘干、造粒，通过流延气压和热压烧结两种方式制备氮化硅导热基板。本发明的氮化硅导热基板，不仅导热性能达到≥80 W·(m·K)‑1，抗弯强度达到850MPa，且工艺简单，适用于高导热氮化硅、高致密度氮化硅和高硬度氮化硅等相关氮化硅材料制备和产品生产，可用于制备电动汽车逆变器（IGBT）及电子封装器件。
Silicon nitride heat conduction substrate and preparation method thereof
一种氮化硅导热基板及其制备方法
YE CHAOCHAO (Autor:in) / ZHAO ZIJUAN (Autor:in)
13.01.2023
Patent
Elektronische Ressource
Chinesisch
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