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Sintered silicon nitride, wear-resistant member using same, and method for producing sintered silicon nitride
The present invention provides a silicon nitride sintered body having silicon nitride crystal grains and a grain boundary phase, characterized in that: D represents a width before surface processing; the relationship between the average particle diameter dA and the average aspect ratio rA of the silicon nitride crystal grains in a first region from the outermost surface to a depth of 0-0.01 D and the average particle diameter dB and the average aspect ratio rB of the silicon nitride crystal grains in a second region inside the first region satisfies the expressions 0.8 < = dA/dB < = 1.2 and 0.8 < = rA/rB < = 1.2.
本发明提供一种具有氮化硅晶粒和晶界相的氮化硅烧结体，其特征在于，在将实施表面加工之前的宽度设定为D时，从最表面到0～0.01D的深度的第1区域中的所述氮化硅晶粒的平均粒径dA及平均纵横比rA与所述第1区域内侧的第2区域中的所述氮化硅晶粒的平均粒径dB及平均纵横比rB的关系满足式0.8≤dA/dB≤1.2、0.8≤rA/rB≤1.2。
Sintered silicon nitride, wear-resistant member using same, and method for producing sintered silicon nitride
The present invention provides a silicon nitride sintered body having silicon nitride crystal grains and a grain boundary phase, characterized in that: D represents a width before surface processing; the relationship between the average particle diameter dA and the average aspect ratio rA of the silicon nitride crystal grains in a first region from the outermost surface to a depth of 0-0.01 D and the average particle diameter dB and the average aspect ratio rB of the silicon nitride crystal grains in a second region inside the first region satisfies the expressions 0.8 < = dA/dB < = 1.2 and 0.8 < = rA/rB < = 1.2.
本发明提供一种具有氮化硅晶粒和晶界相的氮化硅烧结体，其特征在于，在将实施表面加工之前的宽度设定为D时，从最表面到0～0.01D的深度的第1区域中的所述氮化硅晶粒的平均粒径dA及平均纵横比rA与所述第1区域内侧的第2区域中的所述氮化硅晶粒的平均粒径dB及平均纵横比rB的关系满足式0.8≤dA/dB≤1.2、0.8≤rA/rB≤1.2。
Sintered silicon nitride, wear-resistant member using same, and method for producing sintered silicon nitride
氮化硅烧结体、采用其的耐磨损性部件及氮化硅烧结体的制造方法
FUNAKI KAI (Autor:in)
31.01.2023
Patent
Elektronische Ressource
Chinesisch
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