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Preparation method of perovskite structure BNT/LNO heteroepitaxial thin film
The invention relates to a preparation method of a BNT/LNO heteroepitaxial thin film with a perovskite structure. The preparation method of the perovskite structure BNT/LNO heteroepitaxial thin film comprises the following steps: (1) spin-coating a lanthanum nickelate precursor solution on the surface of a single crystal substrate, and then annealing at 600-800 DEG C for 3-60 minutes to obtain an LNO conductive oxide thin film; and (2) spin-coating the surface of the LNO conductive bottom electrode thin film with the sodium bismuth titanate precursor solution, and then annealing at 600-800 DEG C for 3-60 minutes to obtain the perovskite structure BNT/LNO heteroepitaxial thin film.
本发明涉及一种钙钛矿结构BNT/LNO异质外延薄膜的制备方法。所述钙钛矿结构BNT/LNO异质外延薄膜的制备方法包括：（1）将镍酸镧前驱体溶液旋涂在单晶衬底表面，然后在600～800℃下退火3～60分钟，得到LNO导电氧化物薄膜；（2）将钛酸铋钠前驱体溶液旋涂在LNO导电底电极薄膜表面，然后在600～800℃下退火3～60分钟，得到所述钙钛矿结构BNT/LNO异质外延薄膜。
Preparation method of perovskite structure BNT/LNO heteroepitaxial thin film
The invention relates to a preparation method of a BNT/LNO heteroepitaxial thin film with a perovskite structure. The preparation method of the perovskite structure BNT/LNO heteroepitaxial thin film comprises the following steps: (1) spin-coating a lanthanum nickelate precursor solution on the surface of a single crystal substrate, and then annealing at 600-800 DEG C for 3-60 minutes to obtain an LNO conductive oxide thin film; and (2) spin-coating the surface of the LNO conductive bottom electrode thin film with the sodium bismuth titanate precursor solution, and then annealing at 600-800 DEG C for 3-60 minutes to obtain the perovskite structure BNT/LNO heteroepitaxial thin film.
本发明涉及一种钙钛矿结构BNT/LNO异质外延薄膜的制备方法。所述钙钛矿结构BNT/LNO异质外延薄膜的制备方法包括：（1）将镍酸镧前驱体溶液旋涂在单晶衬底表面，然后在600～800℃下退火3～60分钟，得到LNO导电氧化物薄膜；（2）将钛酸铋钠前驱体溶液旋涂在LNO导电底电极薄膜表面，然后在600～800℃下退火3～60分钟，得到所述钙钛矿结构BNT/LNO异质外延薄膜。
Preparation method of perovskite structure BNT/LNO heteroepitaxial thin film
一种钙钛矿结构BNT/LNO异质外延薄膜的制备方法
WANG GENSHUI (Autor:in) / YANG ZHU (Autor:in) / GUO SHAOBO (Autor:in) / DONG XIANLIN (Autor:in)
03.02.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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