Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of high-performance silicon nitride ceramic substrate
The invention discloses a preparation method of a high-performance silicon nitride ceramic substrate, relates to the field of semiconductor ceramic substrate processing, and aims to solve the problem of non-uniform pressing density of green bodies, and the preparation method is characterized by comprising the following steps: S1, premixing Si3N4 powder, an additive and a sintering aid with the content of 4% wt, fully ball-milling and mixing to reduce the agglomeration of superfine silicon nitride particles, and sintering for 2-3 hours; uniform mixing with the auxiliary agent is realized; s2, carrying out granulation treatment on the mixture to form particle size distribution meeting requirements for later use; s3, a cold isostatic pressing CIP sheath is filled with the prepared powder, the sheath is subjected to vacuum packaging, and the pressure of a cylinder body is 200 MPa; s4, entering a sintering process when the density reaches 55% or above of a theoretical value; and S5, carrying out sintering treatment by adopting a hot isostatic pressing process. S6, machining to obtain a silicon nitride ceramic green body meeting the requirement, wherein the density uniformity is less than 0.4%; the hardness gradient is less than 1%; and the bending strength is greater than 800MPa. According to the preparation method of the high-performance silicon nitride ceramic substrate, the pressing density of the green body is uniform, and the thickness is small.
本发明公开了一种高性能氮化硅陶瓷基板的制备方法，涉及半导体陶瓷基板加工领域，旨在解决生坯压制密度不均匀的问题，其技术方案要点是：S1：Si3N4粉体和添加剂、烧结助剂预混合，助剂的含量为4％wt，充分球磨混料，减少超细氮化硅颗粒的团聚，现实其与助剂的均匀混合；S2：对混合料进行造粒处理，形成符合要求的粒径分布，待用；S3：以上制备的粉料充填到冷等静压CIP包套中，包套真空封装，缸体压力200MPa；S4：密度达到理论值55％以上，进入烧结制程；S5：采用热等静压工艺进行烧结处理。S6：机加工得到符合要求的氮化硅陶瓷生坯，密度均匀性小于0.4％；硬度梯度小于1％；抗弯强度大于800MPa。本发明的一种高性能氮化硅陶瓷基板的制备方法生坯压制密度均匀，厚度薄。
Preparation method of high-performance silicon nitride ceramic substrate
The invention discloses a preparation method of a high-performance silicon nitride ceramic substrate, relates to the field of semiconductor ceramic substrate processing, and aims to solve the problem of non-uniform pressing density of green bodies, and the preparation method is characterized by comprising the following steps: S1, premixing Si3N4 powder, an additive and a sintering aid with the content of 4% wt, fully ball-milling and mixing to reduce the agglomeration of superfine silicon nitride particles, and sintering for 2-3 hours; uniform mixing with the auxiliary agent is realized; s2, carrying out granulation treatment on the mixture to form particle size distribution meeting requirements for later use; s3, a cold isostatic pressing CIP sheath is filled with the prepared powder, the sheath is subjected to vacuum packaging, and the pressure of a cylinder body is 200 MPa; s4, entering a sintering process when the density reaches 55% or above of a theoretical value; and S5, carrying out sintering treatment by adopting a hot isostatic pressing process. S6, machining to obtain a silicon nitride ceramic green body meeting the requirement, wherein the density uniformity is less than 0.4%; the hardness gradient is less than 1%; and the bending strength is greater than 800MPa. According to the preparation method of the high-performance silicon nitride ceramic substrate, the pressing density of the green body is uniform, and the thickness is small.
本发明公开了一种高性能氮化硅陶瓷基板的制备方法，涉及半导体陶瓷基板加工领域，旨在解决生坯压制密度不均匀的问题，其技术方案要点是：S1：Si3N4粉体和添加剂、烧结助剂预混合，助剂的含量为4％wt，充分球磨混料，减少超细氮化硅颗粒的团聚，现实其与助剂的均匀混合；S2：对混合料进行造粒处理，形成符合要求的粒径分布，待用；S3：以上制备的粉料充填到冷等静压CIP包套中，包套真空封装，缸体压力200MPa；S4：密度达到理论值55％以上，进入烧结制程；S5：采用热等静压工艺进行烧结处理。S6：机加工得到符合要求的氮化硅陶瓷生坯，密度均匀性小于0.4％；硬度梯度小于1％；抗弯强度大于800MPa。本发明的一种高性能氮化硅陶瓷基板的制备方法生坯压制密度均匀，厚度薄。
Preparation method of high-performance silicon nitride ceramic substrate
一种高性能氮化硅陶瓷基板的制备方法
CHENG YINBING (Autor:in) / GU ZONGHUI (Autor:in) / ZHANG YULING (Autor:in) / ZHUANG ZHIJIE (Autor:in)
03.02.2023
Patent
Elektronische Ressource
Chinesisch
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