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Preparation method of setter plate for high-temperature sintering of nitrogen-oxygen sensor ceramic chip
The invention discloses a preparation method of a setter plate for high-temperature sintering of a nitrogen-oxygen sensor ceramic chip. The preparation method comprises the following steps: (1) selecting a silicon carbide substrate with the thickness of 6-12mm as a base material; (2) grinding the surface of the silicon carbide substrate to enable the surface flatness of the silicon carbide substrate to be less than or equal to 15 microns; (3) the surface of the silicon carbide substrate is subjected to sand blasting treatment, and the roughness of the outer surface after sand blasting reaches the ra value of 20-25 microns; (4) an aluminum oxide coating is sprayed on the silicon carbide substrate, the granularity D50 of aluminum oxide is 5 micrometers, meanwhile, 1% of magnesium oxide powder is added to promote sintering, the thickness of the aluminum oxide coating ranges from 300 micrometers to 500 micrometers, and the sintering temperature ranges from 1500 DEG C to 1600 DEG C; and (5) sintering for 2-4 hours to form the composite coating setter plate. According to the technical scheme, the charging weight is light, the energy consumption is low, the service life is long, and the chip sintering qualification rate of the nitrogen-oxygen sensor can be improved.
本发明公开了一种氮氧传感器陶瓷芯片高温烧结用承烧板的制备方法，包括以下步骤：(1)选择6‑12mm厚的碳化硅基板为基础材料；(2)对碳化硅基板进行表面研磨，使碳化硅基板表面平整度≤15μm；(3)碳化硅基板表面进行喷砂处理，使喷砂后的外表面粗糙度达到ra值为20‑25μm；(4)在碳化硅基板上喷涂氧化铝涂层，氧化铝的颗粒度D50为5μm，同时添加1％的氧化镁粉体来促进烧结，该氧化铝涂层的厚度为300‑500微米，烧结温度为1500‑1600℃；(5)烧结2‑4h后形成复合涂层承烧板。上述技术方案，装炉重量轻、能耗低、使用寿命长且能够提高氮氧传感器的芯片烧结合格率。
Preparation method of setter plate for high-temperature sintering of nitrogen-oxygen sensor ceramic chip
The invention discloses a preparation method of a setter plate for high-temperature sintering of a nitrogen-oxygen sensor ceramic chip. The preparation method comprises the following steps: (1) selecting a silicon carbide substrate with the thickness of 6-12mm as a base material; (2) grinding the surface of the silicon carbide substrate to enable the surface flatness of the silicon carbide substrate to be less than or equal to 15 microns; (3) the surface of the silicon carbide substrate is subjected to sand blasting treatment, and the roughness of the outer surface after sand blasting reaches the ra value of 20-25 microns; (4) an aluminum oxide coating is sprayed on the silicon carbide substrate, the granularity D50 of aluminum oxide is 5 micrometers, meanwhile, 1% of magnesium oxide powder is added to promote sintering, the thickness of the aluminum oxide coating ranges from 300 micrometers to 500 micrometers, and the sintering temperature ranges from 1500 DEG C to 1600 DEG C; and (5) sintering for 2-4 hours to form the composite coating setter plate. According to the technical scheme, the charging weight is light, the energy consumption is low, the service life is long, and the chip sintering qualification rate of the nitrogen-oxygen sensor can be improved.
本发明公开了一种氮氧传感器陶瓷芯片高温烧结用承烧板的制备方法，包括以下步骤：(1)选择6‑12mm厚的碳化硅基板为基础材料；(2)对碳化硅基板进行表面研磨，使碳化硅基板表面平整度≤15μm；(3)碳化硅基板表面进行喷砂处理，使喷砂后的外表面粗糙度达到ra值为20‑25μm；(4)在碳化硅基板上喷涂氧化铝涂层，氧化铝的颗粒度D50为5μm，同时添加1％的氧化镁粉体来促进烧结，该氧化铝涂层的厚度为300‑500微米，烧结温度为1500‑1600℃；(5)烧结2‑4h后形成复合涂层承烧板。上述技术方案，装炉重量轻、能耗低、使用寿命长且能够提高氮氧传感器的芯片烧结合格率。
Preparation method of setter plate for high-temperature sintering of nitrogen-oxygen sensor ceramic chip
一种氮氧传感器陶瓷芯片高温烧结用承烧板的制备方法
CAI FENGYONG (Autor:in)
28.02.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
/
F27D
Einzelheiten oder Zubehör für Industrieöfen, Schachtöfen, Brennöfen oder Retorten, soweit sie nicht auf eine Ofenart eingeschränkt sind
,
DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
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