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The invention discloses a ceramic substrate preparation method based on a tape casting technology. The ceramic substrate preparation method comprises the steps of tape casting slurry preparation, tape casting, low-temperature drying and sintering. In the low-temperature drying process, the raw ceramic tape enters an area of 35-55 DEG C to be dried, then enters an area of 50-70 DEG C to be dried, and finally enters an area of 68-90 DEG C to be dried; in the sintering process, raw ceramic chips are subjected to circuit pattern printing and lamination forming and then placed in a graphite sintering furnace to be sintered; carrying out positive pressure sintering in a flowable nitrogen atmosphere at the air pressure of 15KPa to 50KPa and the sintering temperature of 1680 DEG C to 1750 DEG C; rapidly raising the temperature to 1680-1750 DEG C and keeping the constant temperature for 2-5 hours; and after sintering is completed, self-heating and cooling to room temperature in a flowable nitrogen atmosphere under normal pressure to obtain a finished product. According to the ceramic substrate preparation method based on the tape casting technology in the technical scheme, through segmented low-temperature drying, the drying temperature is gradually increased, it is ensured that the green tape is heated evenly, and the problem of local deformation caused by uneven local heating is avoided.
本发明公开了一种基于流延技术的陶瓷基板制备方法,包括步骤:制备流延浆料、流延成型、低温烘干和烧结;低温烘干中,首先生瓷带进入35℃‑55℃区域烘干,然后进入50℃‑70℃区域烘干,最后进入68℃‑90℃区域烘干;烧结中,将生瓷片经过电路图形印刷和层积成型后再至于石墨烧结炉中进行烧结;进行流动性氮气气氛正压烧结,气压15KPa~50KPa,烧结温度为1680℃~1750℃;快速升温至1680℃~1750℃并保持恒温2‑5小时;烧结完成后在流动性氮气气氛常压下自热冷却至室温,获得成品;本发明技术方案一种基于流延技术的陶瓷基板制备方法,通过分段低温烘干,烘干温度逐渐上升,确保生瓷带受热均匀,避免出现局部受热不均出现局部变形的问题。
The invention discloses a ceramic substrate preparation method based on a tape casting technology. The ceramic substrate preparation method comprises the steps of tape casting slurry preparation, tape casting, low-temperature drying and sintering. In the low-temperature drying process, the raw ceramic tape enters an area of 35-55 DEG C to be dried, then enters an area of 50-70 DEG C to be dried, and finally enters an area of 68-90 DEG C to be dried; in the sintering process, raw ceramic chips are subjected to circuit pattern printing and lamination forming and then placed in a graphite sintering furnace to be sintered; carrying out positive pressure sintering in a flowable nitrogen atmosphere at the air pressure of 15KPa to 50KPa and the sintering temperature of 1680 DEG C to 1750 DEG C; rapidly raising the temperature to 1680-1750 DEG C and keeping the constant temperature for 2-5 hours; and after sintering is completed, self-heating and cooling to room temperature in a flowable nitrogen atmosphere under normal pressure to obtain a finished product. According to the ceramic substrate preparation method based on the tape casting technology in the technical scheme, through segmented low-temperature drying, the drying temperature is gradually increased, it is ensured that the green tape is heated evenly, and the problem of local deformation caused by uneven local heating is avoided.
本发明公开了一种基于流延技术的陶瓷基板制备方法,包括步骤:制备流延浆料、流延成型、低温烘干和烧结;低温烘干中,首先生瓷带进入35℃‑55℃区域烘干,然后进入50℃‑70℃区域烘干,最后进入68℃‑90℃区域烘干;烧结中,将生瓷片经过电路图形印刷和层积成型后再至于石墨烧结炉中进行烧结;进行流动性氮气气氛正压烧结,气压15KPa~50KPa,烧结温度为1680℃~1750℃;快速升温至1680℃~1750℃并保持恒温2‑5小时;烧结完成后在流动性氮气气氛常压下自热冷却至室温,获得成品;本发明技术方案一种基于流延技术的陶瓷基板制备方法,通过分段低温烘干,烘干温度逐渐上升,确保生瓷带受热均匀,避免出现局部受热不均出现局部变形的问题。
Ceramic substrate preparation method based on tape casting technology
一种基于流延技术的陶瓷基板制备方法
YAN HUI (Autor:in)
14.03.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
/
B28B
Formgeben von Ton oder anderen keramischen Stoffzusammensetzungen, Schlacke oder von Mischungen, die zementartiges Material enthalten, z.B. Putzmörtel
,
SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG OR MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
/
F26B
DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
,
Trocknen von festen Gütern oder Erzeugnissen durch Entfernen von Flüssigkeit
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