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Medium-temperature sintered microwave dielectric ceramic material and preparation method thereof
The invention belongs to the technical field of electronic ceramics, and discloses a low-dielectric low-loss medium-temperature sintered microwave dielectric ceramic material and a preparation method thereof. The material disclosed by the invention is a BaWO4-Ba2Si3O8-based medium-temperature sintered microwave dielectric ceramic material, the chemical general formula of the material is WO3-xSiO2-(1 + 2x/3) BaO, x is greater than 0 and less than or equal to 0.8 mol, the material is prepared by a solid-phase reaction method, and crystal phases after sintering are BaWO4 (JCPDS # 01-085-0588) and Ba2Si3O8 (JCPDS # 00-027-1035). The sintering temperature of the ceramic material is 1000-1150 DEG C, the dielectric constant is 7-8.5, the loss is as low as 1.7 * 10 <-4 >, and the quality factor is 10000-72000 GHz, so that the ceramic material can be applied to the field of medium-temperature sintering, and is simple in preparation process and excellent in performance.
本发明属于电子陶瓷技术领域，公开了一种低介低损耗的中温烧结微波介质陶瓷材料及其制备方法。本发明材料为BaWO4‑Ba2Si3O8基中温烧结微波介质陶瓷材料，其材料化学通式为WO3‑xSiO2‑(1+2x/3)BaO，其中0＜x≤0.8mol，通过固相反应法制备，烧结后的晶相为BaWO4(JCPDS#01‑085‑0588)和Ba2Si3O8(JCPDS#00‑027‑1035)两相。本发明陶瓷材料的烧结温度为1000℃～1150℃，介电常数为7～8.5，损耗低至1.7×10‑4，品质因素为10000GHz～72000GHz，使其可以应用在中温烧结领域，制备工艺简单，性能优异。
Medium-temperature sintered microwave dielectric ceramic material and preparation method thereof
The invention belongs to the technical field of electronic ceramics, and discloses a low-dielectric low-loss medium-temperature sintered microwave dielectric ceramic material and a preparation method thereof. The material disclosed by the invention is a BaWO4-Ba2Si3O8-based medium-temperature sintered microwave dielectric ceramic material, the chemical general formula of the material is WO3-xSiO2-(1 + 2x/3) BaO, x is greater than 0 and less than or equal to 0.8 mol, the material is prepared by a solid-phase reaction method, and crystal phases after sintering are BaWO4 (JCPDS # 01-085-0588) and Ba2Si3O8 (JCPDS # 00-027-1035). The sintering temperature of the ceramic material is 1000-1150 DEG C, the dielectric constant is 7-8.5, the loss is as low as 1.7 * 10 <-4 >, and the quality factor is 10000-72000 GHz, so that the ceramic material can be applied to the field of medium-temperature sintering, and is simple in preparation process and excellent in performance.
本发明属于电子陶瓷技术领域，公开了一种低介低损耗的中温烧结微波介质陶瓷材料及其制备方法。本发明材料为BaWO4‑Ba2Si3O8基中温烧结微波介质陶瓷材料，其材料化学通式为WO3‑xSiO2‑(1+2x/3)BaO，其中0＜x≤0.8mol，通过固相反应法制备，烧结后的晶相为BaWO4(JCPDS#01‑085‑0588)和Ba2Si3O8(JCPDS#00‑027‑1035)两相。本发明陶瓷材料的烧结温度为1000℃～1150℃，介电常数为7～8.5，损耗低至1.7×10‑4，品质因素为10000GHz～72000GHz，使其可以应用在中温烧结领域，制备工艺简单，性能优异。
Medium-temperature sintered microwave dielectric ceramic material and preparation method thereof
一种中温烧结微波介质陶瓷材料及其制备方法
CHEN YAWEI (Autor:in) / ZHOU ZHIBIN (Autor:in) / CHEN ZHIYUAN (Autor:in) / LIANG QIXIN (Autor:in)
23.06.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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