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Niobium-deficient high-energy-storage silver niobate-based lead-free antiferroelectric ceramic and preparation method thereof
The invention discloses niobium-deficient high-energy-storage silver niobate-based lead-free antiferroelectric ceramic, the chemical formula of the ceramic is AgNbxTa0. 1O0. 5 + 2.5 x, x is molar percentage, and the value of x meets the electric neutrality. The invention also discloses a preparation method of the niobium-deficient high-energy-storage silver niobate-based lead-free anti-ferroelectric ceramic. According to the niobium-deficient high-energy-storage silver niobate-based lead-free antiferroelectric ceramic and the preparation method thereof provided by the invention, on the basis of doping 10% of Ta < 5 + > at the niobium site, the content of Nb < 5 + > is reduced, so that the prepared high-energy-storage silver niobate-based ceramic has the advantages of high energy storage density (6.1 J/cm < 3 >), high energy storage efficiency (62%), high breakdown electric field (317kV/cm) and high polarization intensity (54 [mu] C/cm < 2 >), the doping amount of doped ions can be reduced, and the service life of the ceramic is prolonged. Meanwhile, the energy storage performance of the anti-ferroelectric ceramic can be remarkably improved.
本发明公开了一种缺铌高储能铌酸银基无铅反铁电陶瓷,该陶瓷的化学式为AgNbxTa0.1O0.5+2.5x,其中的x为摩尔百分比,x的取值满足电中性。本发明还公开一种缺铌高储能铌酸银基无铅反铁电陶瓷制备方法。本发明提供的一种缺铌高储能铌酸银基无铅反铁电陶瓷及其制备方法,通过在铌位掺杂10%Ta5+的基础上,减少Nb5+的含量,制备出的高储能铌酸银基陶瓷兼具高储能密度(6.1J/cm3)、高储能效率(62%)、高击穿电场(317kV/cm)、高极化强度(54μC/cm2)的优势,能够降低掺杂离子的掺杂量,减少材料浪费,同时能够显著提高反铁电陶瓷储能性能。
Niobium-deficient high-energy-storage silver niobate-based lead-free antiferroelectric ceramic and preparation method thereof
The invention discloses niobium-deficient high-energy-storage silver niobate-based lead-free antiferroelectric ceramic, the chemical formula of the ceramic is AgNbxTa0. 1O0. 5 + 2.5 x, x is molar percentage, and the value of x meets the electric neutrality. The invention also discloses a preparation method of the niobium-deficient high-energy-storage silver niobate-based lead-free anti-ferroelectric ceramic. According to the niobium-deficient high-energy-storage silver niobate-based lead-free antiferroelectric ceramic and the preparation method thereof provided by the invention, on the basis of doping 10% of Ta < 5 + > at the niobium site, the content of Nb < 5 + > is reduced, so that the prepared high-energy-storage silver niobate-based ceramic has the advantages of high energy storage density (6.1 J/cm < 3 >), high energy storage efficiency (62%), high breakdown electric field (317kV/cm) and high polarization intensity (54 [mu] C/cm < 2 >), the doping amount of doped ions can be reduced, and the service life of the ceramic is prolonged. Meanwhile, the energy storage performance of the anti-ferroelectric ceramic can be remarkably improved.
本发明公开了一种缺铌高储能铌酸银基无铅反铁电陶瓷,该陶瓷的化学式为AgNbxTa0.1O0.5+2.5x,其中的x为摩尔百分比,x的取值满足电中性。本发明还公开一种缺铌高储能铌酸银基无铅反铁电陶瓷制备方法。本发明提供的一种缺铌高储能铌酸银基无铅反铁电陶瓷及其制备方法,通过在铌位掺杂10%Ta5+的基础上,减少Nb5+的含量,制备出的高储能铌酸银基陶瓷兼具高储能密度(6.1J/cm3)、高储能效率(62%)、高击穿电场(317kV/cm)、高极化强度(54μC/cm2)的优势,能够降低掺杂离子的掺杂量,减少材料浪费,同时能够显著提高反铁电陶瓷储能性能。
Niobium-deficient high-energy-storage silver niobate-based lead-free antiferroelectric ceramic and preparation method thereof
一种缺铌高储能铌酸银基无铅反铁电陶瓷及其制备方法
GUO YANYAN (Autor:in) / ZHANG ZUO (Autor:in) / FAN YI (Autor:in) / HU HAIWEI (Autor:in)
23.06.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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