Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Silicon carbide ceramic material and preparation method thereof
The invention provides a preparation method of a silicon carbide ceramic material, which comprises the following steps: (1) dissolving a sintering aid in water, heating and dissolving to prepare a mixed solution, and ball-milling and mixing the mixed solution, silicon carbide powder and a solvent to obtain ceramic slurry; (2) drying, debonding, grinding and sieving the ceramic slurry obtained in the step (1) to obtain raw material powder; and (3) putting the raw material powder obtained in the step (2) into a mold, and carrying out hot pressed sintering to obtain the silicon carbide ceramic. The invention also provides the silicon carbide ceramic material prepared by the preparation method. The invention relates to a high-purity and high-thermal-conductivity silicon carbide ceramic material suitable for semiconductor manufacturing and a preparation method thereof, a carbon source and a boron source are adopted as sintering aids, and meanwhile, the boron source is introduced in a liquid phase form, so that the dispersity of the silicon carbide ceramic material is improved, and SiC ceramic is densified with the lowest addition amount.
本发明提供一种碳化硅陶瓷材料的制备方法，包括如下步骤：步骤(1)、将烧结助剂溶于水中加热溶解配成混合溶液，将该混合溶液、碳化硅粉末和溶剂经过球磨混合，得到陶瓷浆料；步骤(2)、将步骤(1)得到的陶瓷浆料烘干、脱粘、研磨、过筛，得到原料粉体；步骤(3)、将步骤(2)得到的原料粉体置于模具中经过热压烧结后，即得所述碳化硅陶瓷。本发明还提供了一种上述制备方法制备的碳化硅陶瓷材料。本发明涉及一种适用于半导体制造的高纯度、高导热性的碳化硅陶瓷材料及其制备方法，采用碳源和硼源作为烧结助剂，同时以液相的形式引入硼源，提高了其分散性，以最低的添加量使SiC陶瓷致密化。
Silicon carbide ceramic material and preparation method thereof
The invention provides a preparation method of a silicon carbide ceramic material, which comprises the following steps: (1) dissolving a sintering aid in water, heating and dissolving to prepare a mixed solution, and ball-milling and mixing the mixed solution, silicon carbide powder and a solvent to obtain ceramic slurry; (2) drying, debonding, grinding and sieving the ceramic slurry obtained in the step (1) to obtain raw material powder; and (3) putting the raw material powder obtained in the step (2) into a mold, and carrying out hot pressed sintering to obtain the silicon carbide ceramic. The invention also provides the silicon carbide ceramic material prepared by the preparation method. The invention relates to a high-purity and high-thermal-conductivity silicon carbide ceramic material suitable for semiconductor manufacturing and a preparation method thereof, a carbon source and a boron source are adopted as sintering aids, and meanwhile, the boron source is introduced in a liquid phase form, so that the dispersity of the silicon carbide ceramic material is improved, and SiC ceramic is densified with the lowest addition amount.
本发明提供一种碳化硅陶瓷材料的制备方法，包括如下步骤：步骤(1)、将烧结助剂溶于水中加热溶解配成混合溶液，将该混合溶液、碳化硅粉末和溶剂经过球磨混合，得到陶瓷浆料；步骤(2)、将步骤(1)得到的陶瓷浆料烘干、脱粘、研磨、过筛，得到原料粉体；步骤(3)、将步骤(2)得到的原料粉体置于模具中经过热压烧结后，即得所述碳化硅陶瓷。本发明还提供了一种上述制备方法制备的碳化硅陶瓷材料。本发明涉及一种适用于半导体制造的高纯度、高导热性的碳化硅陶瓷材料及其制备方法，采用碳源和硼源作为烧结助剂，同时以液相的形式引入硼源，提高了其分散性，以最低的添加量使SiC陶瓷致密化。
Silicon carbide ceramic material and preparation method thereof
一种碳化硅陶瓷材料及其制备方法
YANG YONG (Autor:in) / LIU MENG (Autor:in) / HUANG ZHENGREN (Autor:in) / LIU YAN (Autor:in) / LIU XUEJIAN (Autor:in) / YAO XIUMIN (Autor:in) / WEI YUQUAN (Autor:in)
04.07.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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