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Lead hafnium stannate-based anti-ferroelectric ceramic material and preparation method thereof
The invention relates to a lead hafnium stannate-based anti-ferroelectric ceramic material and a preparation method thereof, and belongs to the technical field of dielectric materials. The chemical general formula of the anti-ferroelectric ceramic material is Pb < 1-x > La < x > (Hf < 0.45 > Sn < 0.55 >) < 0.995 > O < 3 >, and x is more than 0.00 and less than or equal to 0.03. The preparation method comprises the following steps: taking PbO, La2O3, HfO2 and SnO2 as raw materials, and proportioning according to Pb1-xLax( Hf0. 45Sn0. 55) 0.995O3 (x is more than 0.00 and less than or equal to 0.03) to obtain a mixture; carrying out ball milling on the mixture; performing drying; pre-sintering is performed; carrying out secondary ball milling and drying; mixing with an organic solvent and PVA, sieving, and observing the flowability to ensure good flowability; and carrying out compression molding and discharging glue. According to the invention, the doping of La < 3 + > and Sn < 4 + > in the lead hafnium stannate-based anti-ferroelectric ceramic material is proposed for the first time, the Hf < 4 + > site is partially replaced, and meanwhile, the interplanar spacing of a sample is reduced along with the increase of the La doping content by regulating and controlling the doping amount of La < 3 + >, so that the lattice size and the lattice constant are correspondingly reduced. Therefore, the optimal grain size of the lead hafnium stannate-based anti-ferroelectric ceramic material is found, so that the energy storage density and the energy storage efficiency of the material are improved, and the maximum energy storage efficiency can reach 96.86%.
本发明涉及一种铪锡酸铅基反铁电陶瓷材料及其制备方法，属于电介质材料技术领域。该反铁电陶瓷材料的化学通式为Pb1‑xLax(Hf0.45Sn0.55)0.995O3，其中，0.00＜x≤0.03。该制备方法包括以下步骤：以PbO、La2O3、HfO2和SnO2为原料，依照Pb1‑xLax(Hf0.45Sn0.55)0.995O3，其中，0.00＜x≤0.03，配料，得到混合料；将混合料球磨；烘干；预烧；二次球磨并烘干；与有机溶剂和PVA混合，过筛，观察其流动性，确保流动性良好；压制成型，并排胶。本发明首次提出在铪锡酸铅基反铁电陶瓷材料中掺入La3+，Sn4+在Hf4+位点部分替代，同时通过调控La3+的掺入量，使样品晶面间距随La掺杂含量的增加而减小，故晶格尺寸和点阵常数也在相应减小。由此找到铪锡酸铅基反铁电陶瓷材料的最佳晶粒尺寸，从而提升其储能密度和储能效率，最大储能效率可达96.86%。
Lead hafnium stannate-based anti-ferroelectric ceramic material and preparation method thereof
The invention relates to a lead hafnium stannate-based anti-ferroelectric ceramic material and a preparation method thereof, and belongs to the technical field of dielectric materials. The chemical general formula of the anti-ferroelectric ceramic material is Pb < 1-x > La < x > (Hf < 0.45 > Sn < 0.55 >) < 0.995 > O < 3 >, and x is more than 0.00 and less than or equal to 0.03. The preparation method comprises the following steps: taking PbO, La2O3, HfO2 and SnO2 as raw materials, and proportioning according to Pb1-xLax( Hf0. 45Sn0. 55) 0.995O3 (x is more than 0.00 and less than or equal to 0.03) to obtain a mixture; carrying out ball milling on the mixture; performing drying; pre-sintering is performed; carrying out secondary ball milling and drying; mixing with an organic solvent and PVA, sieving, and observing the flowability to ensure good flowability; and carrying out compression molding and discharging glue. According to the invention, the doping of La < 3 + > and Sn < 4 + > in the lead hafnium stannate-based anti-ferroelectric ceramic material is proposed for the first time, the Hf < 4 + > site is partially replaced, and meanwhile, the interplanar spacing of a sample is reduced along with the increase of the La doping content by regulating and controlling the doping amount of La < 3 + >, so that the lattice size and the lattice constant are correspondingly reduced. Therefore, the optimal grain size of the lead hafnium stannate-based anti-ferroelectric ceramic material is found, so that the energy storage density and the energy storage efficiency of the material are improved, and the maximum energy storage efficiency can reach 96.86%.
本发明涉及一种铪锡酸铅基反铁电陶瓷材料及其制备方法，属于电介质材料技术领域。该反铁电陶瓷材料的化学通式为Pb1‑xLax(Hf0.45Sn0.55)0.995O3，其中，0.00＜x≤0.03。该制备方法包括以下步骤：以PbO、La2O3、HfO2和SnO2为原料，依照Pb1‑xLax(Hf0.45Sn0.55)0.995O3，其中，0.00＜x≤0.03，配料，得到混合料；将混合料球磨；烘干；预烧；二次球磨并烘干；与有机溶剂和PVA混合，过筛，观察其流动性，确保流动性良好；压制成型，并排胶。本发明首次提出在铪锡酸铅基反铁电陶瓷材料中掺入La3+，Sn4+在Hf4+位点部分替代，同时通过调控La3+的掺入量，使样品晶面间距随La掺杂含量的增加而减小，故晶格尺寸和点阵常数也在相应减小。由此找到铪锡酸铅基反铁电陶瓷材料的最佳晶粒尺寸，从而提升其储能密度和储能效率，最大储能效率可达96.86%。
Lead hafnium stannate-based anti-ferroelectric ceramic material and preparation method thereof
一种铪锡酸铅基反铁电陶瓷材料及其制备方法
WANG ERPING (Autor:in) / GAO JINGXIA (Autor:in) / LI WENFANG (Autor:in) / ZHANG YANGYANG (Autor:in) / ZHANG JINPING (Autor:in) / SUN CAIXIA (Autor:in) / JIA JIE (Autor:in)
07.07.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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