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Method for improving dielectric property of copper tantalate ceramic material
The invention provides a method for improving the dielectric property of a copper tantalate ceramic material, which is realized by forming a solid solution by doping a low-concentration Ti element, and comprises the following steps: fully mixing analytically pure CuO, TiO2, Ta205 and zirconium oxide balls, adding a proper amount of deionized water, carrying out ball milling for 6 hours, drying, calcining at 900 DEG C, and carrying out heat preservation for 4 hours; molding after grinding and sieving, and sintering at 1060 DEG C for 3 hours; and cooling to 600 DEG C at the speed of 4.5 DEG C/min, and then naturally cooling to prepare the copper tantalate ceramic material with the high dielectric coefficient. The method disclosed by the invention has the characteristics of simple process, low sintering temperature, short synthesis time, good sintering characteristic and the like.
本发明提供一种提高钽酸铜陶瓷材料介电性能的方法，通过低浓度Ti元素掺杂形成固溶体实现的，将分析纯的CuO、TiO2、Ta205和氧化锆球充分混合，加入适量去离子水，球磨6小时，烘干后于900℃煅烧，保温4小时；经研磨过筛后成型，在1060℃烧结3小时；以4.5℃/min降温至600℃，然后自然冷却制成具有高介电系数的钽酸铜陶瓷材料。本发明所述方法具有工艺简单、烧结温度低、合成时间短、烧结特性佳等特点。
Method for improving dielectric property of copper tantalate ceramic material
The invention provides a method for improving the dielectric property of a copper tantalate ceramic material, which is realized by forming a solid solution by doping a low-concentration Ti element, and comprises the following steps: fully mixing analytically pure CuO, TiO2, Ta205 and zirconium oxide balls, adding a proper amount of deionized water, carrying out ball milling for 6 hours, drying, calcining at 900 DEG C, and carrying out heat preservation for 4 hours; molding after grinding and sieving, and sintering at 1060 DEG C for 3 hours; and cooling to 600 DEG C at the speed of 4.5 DEG C/min, and then naturally cooling to prepare the copper tantalate ceramic material with the high dielectric coefficient. The method disclosed by the invention has the characteristics of simple process, low sintering temperature, short synthesis time, good sintering characteristic and the like.
本发明提供一种提高钽酸铜陶瓷材料介电性能的方法，通过低浓度Ti元素掺杂形成固溶体实现的，将分析纯的CuO、TiO2、Ta205和氧化锆球充分混合，加入适量去离子水，球磨6小时，烘干后于900℃煅烧，保温4小时；经研磨过筛后成型，在1060℃烧结3小时；以4.5℃/min降温至600℃，然后自然冷却制成具有高介电系数的钽酸铜陶瓷材料。本发明所述方法具有工艺简单、烧结温度低、合成时间短、烧结特性佳等特点。
Method for improving dielectric property of copper tantalate ceramic material
一种提高钽酸铜陶瓷材料介电性能的方法
LIU YANG (Autor:in) / TIAN CHANG'AN (Autor:in) / WANG CAO (Autor:in) / HE TUSHENG (Autor:in) / CHEN CHAO (Autor:in)
25.07.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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