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Method for repairing graphite disc
The invention relates to the technical field of epitaxial wafer growth equipment, in particular to a method for repairing a graphite disc. The method for repairing the graphite plate comprises the following steps: cleaning a damaged part of the graphite plate, digging holes to obtain cylindrical holes, cleaning the holes, cutting a silicon nitride (SiN) material into repairing blocks with the same shape as the holes, putting the repairing blocks into the holes, injecting a sintering aid, and sintering at 1000-2000 DEG C for 12-15 hours. According to the method, the silicon nitride repairing block is used for repairing the graphite disc, the cost is greatly reduced under the condition that the performance of the graphite disc is not affected, and compared with conventional graphite repairing, the graphite disc repaired through the method is better in durability and higher in antioxidant temperature.
本发明涉及外延片生长设备技术领域,具体涉及一种修补石墨盘的方法。该修补石墨盘的方法,包括以下步骤:石墨盘的破损处清洁后进行挖孔处理得到柱形的孔洞,清洁孔洞并将氮化硅(SiN)材料切割成与孔洞形状相同的修补块,将修补块放入孔洞中并注入助烧剂,在1000~2000℃下烧结12~15h。该方法使用氮化硅修补块修补石墨盘,在不影响石墨盘性能的情况下极大地减少了成本,且与常规石墨修补对比,采用本发明的方法修补后的石墨盘耐久性更好,抗氧化温度更高。
Method for repairing graphite disc
The invention relates to the technical field of epitaxial wafer growth equipment, in particular to a method for repairing a graphite disc. The method for repairing the graphite plate comprises the following steps: cleaning a damaged part of the graphite plate, digging holes to obtain cylindrical holes, cleaning the holes, cutting a silicon nitride (SiN) material into repairing blocks with the same shape as the holes, putting the repairing blocks into the holes, injecting a sintering aid, and sintering at 1000-2000 DEG C for 12-15 hours. According to the method, the silicon nitride repairing block is used for repairing the graphite disc, the cost is greatly reduced under the condition that the performance of the graphite disc is not affected, and compared with conventional graphite repairing, the graphite disc repaired through the method is better in durability and higher in antioxidant temperature.
本发明涉及外延片生长设备技术领域,具体涉及一种修补石墨盘的方法。该修补石墨盘的方法,包括以下步骤:石墨盘的破损处清洁后进行挖孔处理得到柱形的孔洞,清洁孔洞并将氮化硅(SiN)材料切割成与孔洞形状相同的修补块,将修补块放入孔洞中并注入助烧剂,在1000~2000℃下烧结12~15h。该方法使用氮化硅修补块修补石墨盘,在不影响石墨盘性能的情况下极大地减少了成本,且与常规石墨修补对比,采用本发明的方法修补后的石墨盘耐久性更好,抗氧化温度更高。
Method for repairing graphite disc
一种修补石墨盘的方法
MA YE (Autor:in) / SONG SHUIYAN (Autor:in) / CHEN LINGYAN (Autor:in) / SONG ZHENXIONG (Autor:in) / WEI SHOUJIN (Autor:in) / LIU HENGSHAN (Autor:in)
04.08.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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