Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
一种高密度IZTO靶材的制备方法
本发明涉及靶材技术领域，具体涉及一种高密度IZTO靶材的制备方法，所述制备方法包括如下步骤：S1原材料选择、S2氧化锌球磨、S3混合球磨、S4喷雾造粒、S5压力成型、S6靶材烧结。本发明选用特定BET值的氧化铟、氧化锡和氧化锌作为原材料，通过搅拌球磨使粉末混合均匀，经离心式喷雾造粒机干燥造成IZTO粉末，再使用等静压成型机将IZTO粉末压缩成素胚，然后在常压氧气气氛下进行烧结处理，控制升温速率和保温时间以实现高密度靶材的制备。与传统工艺相比，该方案可大幅度提高靶材的密度和均匀性，具有显著的应用价值。
The invention relates to the technical field of target materials, in particular to a high-density IZTO target material preparation method which comprises the following steps: S1, raw material selection, S2, zinc oxide ball milling, S3, mixed ball milling, S4, spray granulation, S5, pressure forming and S6, target material sintering. The preparation method comprises the following steps: selecting indium oxide, tin oxide and zinc oxide with specific BET values as raw materials, uniformly mixing the powder through stirring and ball milling, drying through a centrifugal spray granulator to obtain IZTO powder, compressing the IZTO powder into a green body by using an isostatic pressing forming machine, and sintering in a normal-pressure oxygen atmosphere to obtain the IZTO ceramic material. And the heating rate and the heat preservation time are controlled to prepare the high-density target material. Compared with the traditional process, the scheme can greatly improve the density and uniformity of the target material, and has remarkable application value.
一种高密度IZTO靶材的制备方法
本发明涉及靶材技术领域，具体涉及一种高密度IZTO靶材的制备方法，所述制备方法包括如下步骤：S1原材料选择、S2氧化锌球磨、S3混合球磨、S4喷雾造粒、S5压力成型、S6靶材烧结。本发明选用特定BET值的氧化铟、氧化锡和氧化锌作为原材料，通过搅拌球磨使粉末混合均匀，经离心式喷雾造粒机干燥造成IZTO粉末，再使用等静压成型机将IZTO粉末压缩成素胚，然后在常压氧气气氛下进行烧结处理，控制升温速率和保温时间以实现高密度靶材的制备。与传统工艺相比，该方案可大幅度提高靶材的密度和均匀性，具有显著的应用价值。
The invention relates to the technical field of target materials, in particular to a high-density IZTO target material preparation method which comprises the following steps: S1, raw material selection, S2, zinc oxide ball milling, S3, mixed ball milling, S4, spray granulation, S5, pressure forming and S6, target material sintering. The preparation method comprises the following steps: selecting indium oxide, tin oxide and zinc oxide with specific BET values as raw materials, uniformly mixing the powder through stirring and ball milling, drying through a centrifugal spray granulator to obtain IZTO powder, compressing the IZTO powder into a green body by using an isostatic pressing forming machine, and sintering in a normal-pressure oxygen atmosphere to obtain the IZTO ceramic material. And the heating rate and the heat preservation time are controlled to prepare the high-density target material. Compared with the traditional process, the scheme can greatly improve the density and uniformity of the target material, and has remarkable application value.
Mechanical reliability of transparent conducting IZTO film electrodes for flexible panel displays
| British Library Online Contents | 2011
Room temperature deposition of IZTO transparent anode films for organic light-emitting diodes
| British Library Online Contents | 2012