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Bi-doped CuO semiconductor material with strong ultraviolet luminescence characteristic
The invention discloses a Bi-doped CuO semiconductor material with a strong ultraviolet luminescence characteristic, which is prepared by the following steps: fully mixing CuO powder and Bi2Se3 powder according to a molar ratio of 10: (0.8-1.2), grinding, tabletting, and annealing in an air environment at 800-950 DEG C for 5-15 minutes. The light-emitting peak position of the Bi-doped CuO semiconductor material is 439 nm, the Bi-doped CuO semiconductor material is purple light, the wavelength is shorter, the band gap is wider, the maximum photoluminescence intensity can reach 70000 a.u. And is about 78 times that of unannealed pure CuO, it is indicated that when Bi is used for conducting doping modification on CuO, the light-emitting performance of CuO can be effectively improved, the photoelectric conversion efficiency and the electro-optical conversion efficiency of CuO can be improved, and the Bi-doped CuO semiconductor material is expected to become a novel material in the field of photoelectric materials.
本发明公开了一种具有强紫外发光特性的Bi掺杂CuO半导体材料，所述材料是将CuO粉末与Bi2Se3粉末按照摩尔比10:0.8～1.2充分混合研磨后压片，然后在空气环境中800～950℃退火5～15min获得。本发明Bi掺杂CuO半导体材料发光峰位为439nm，呈紫光，波长更短，带隙更宽，其光致发光强度最高可达到70000a.u.，是未退火的纯CuO的78倍左右，说明使用Bi对CuO进行掺杂改性，可以有效提高CuO的发光性能，提高其光电和电光转换效率，有望成为光电材料领域的新型材料。
Bi-doped CuO semiconductor material with strong ultraviolet luminescence characteristic
The invention discloses a Bi-doped CuO semiconductor material with a strong ultraviolet luminescence characteristic, which is prepared by the following steps: fully mixing CuO powder and Bi2Se3 powder according to a molar ratio of 10: (0.8-1.2), grinding, tabletting, and annealing in an air environment at 800-950 DEG C for 5-15 minutes. The light-emitting peak position of the Bi-doped CuO semiconductor material is 439 nm, the Bi-doped CuO semiconductor material is purple light, the wavelength is shorter, the band gap is wider, the maximum photoluminescence intensity can reach 70000 a.u. And is about 78 times that of unannealed pure CuO, it is indicated that when Bi is used for conducting doping modification on CuO, the light-emitting performance of CuO can be effectively improved, the photoelectric conversion efficiency and the electro-optical conversion efficiency of CuO can be improved, and the Bi-doped CuO semiconductor material is expected to become a novel material in the field of photoelectric materials.
本发明公开了一种具有强紫外发光特性的Bi掺杂CuO半导体材料，所述材料是将CuO粉末与Bi2Se3粉末按照摩尔比10:0.8～1.2充分混合研磨后压片，然后在空气环境中800～950℃退火5～15min获得。本发明Bi掺杂CuO半导体材料发光峰位为439nm，呈紫光，波长更短，带隙更宽，其光致发光强度最高可达到70000a.u.，是未退火的纯CuO的78倍左右，说明使用Bi对CuO进行掺杂改性，可以有效提高CuO的发光性能，提高其光电和电光转换效率，有望成为光电材料领域的新型材料。
Bi-doped CuO semiconductor material with strong ultraviolet luminescence characteristic
一种具有强紫外发光特性的Bi掺杂CuO半导体材料
GAO FEI (Autor:in) / WU YUXIN (Autor:in) / LU CHENRUI (Autor:in) / LI YUANRUI (Autor:in) / SHI BONAN (Autor:in) / ZHANG JUNQI (Autor:in) / YANG FEI (Autor:in)
28.11.2023
Patent
Elektronische Ressource
Chinesisch
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