Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of tantalum carbide coating
The invention belongs to the technical field of semiconductor crystal growth, and particularly relates to a preparation method of a tantalum carbide coating. According to the method, the bonding performance of the coating and the base material is improved through the addition of tantalum, the diffusivity of tantalum carbide during sintering is enhanced through the addition of tantalum oxide, sintering densification is achieved, and the sintering temperature is reduced. And meanwhile, a CVD process is combined with a sintering method, so that the tantalum carbide coating with high purity and low surface roughness can be obtained. In addition, due to the fact that the diffusivity of tantalum carbide is poor, a small number of holes which are not covered by tantalum carbide inevitably exist in the sintering process, the holes left in the tantalum carbide sintering process are covered through the CVD technology, and the corrosion resistance of the carbon base material is effectively improved.
本发明属于半导体晶体生长技术领域，具体涉及一种碳化钽涂层的制备方法。在本发明中，钽的添加增加了涂层与基材的结合性能，氧化钽的添加增强了碳化钽烧结时的扩散性，有利于实现烧结的致密化并降低烧结温度。同时将CVD工艺与烧结法相结合，有利于获得高纯度、低表面粗糙度的碳化钽涂层。此外由于碳化钽的扩散性较差，因此在烧结的过程中，不可避免的存在少量未能被碳化钽覆盖的孔隙，因此通过CVD工艺使得烧结碳化钽过程中残留的孔洞被掩盖，有效提高碳基材的耐腐蚀性。
Preparation method of tantalum carbide coating
The invention belongs to the technical field of semiconductor crystal growth, and particularly relates to a preparation method of a tantalum carbide coating. According to the method, the bonding performance of the coating and the base material is improved through the addition of tantalum, the diffusivity of tantalum carbide during sintering is enhanced through the addition of tantalum oxide, sintering densification is achieved, and the sintering temperature is reduced. And meanwhile, a CVD process is combined with a sintering method, so that the tantalum carbide coating with high purity and low surface roughness can be obtained. In addition, due to the fact that the diffusivity of tantalum carbide is poor, a small number of holes which are not covered by tantalum carbide inevitably exist in the sintering process, the holes left in the tantalum carbide sintering process are covered through the CVD technology, and the corrosion resistance of the carbon base material is effectively improved.
本发明属于半导体晶体生长技术领域，具体涉及一种碳化钽涂层的制备方法。在本发明中，钽的添加增加了涂层与基材的结合性能，氧化钽的添加增强了碳化钽烧结时的扩散性，有利于实现烧结的致密化并降低烧结温度。同时将CVD工艺与烧结法相结合，有利于获得高纯度、低表面粗糙度的碳化钽涂层。此外由于碳化钽的扩散性较差，因此在烧结的过程中，不可避免的存在少量未能被碳化钽覆盖的孔隙，因此通过CVD工艺使得烧结碳化钽过程中残留的孔洞被掩盖，有效提高碳基材的耐腐蚀性。
Preparation method of tantalum carbide coating
一种碳化钽涂层的制备方法
SHI LIN (Autor:in) / CHEN PENGFEI (Autor:in) / NA SEUNG-IK (Autor:in) / LEUNG KWONG KEUNG (Autor:in) / YANG QIANQIAN (Autor:in)
08.12.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
| Europäisches Patentamt | 2024