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Ferroelectric memory material and preparation method thereof
The invention discloses a ferroelectric memory material and a preparation method thereof, the ferroelectric memory material is a ferroelectric ceramic material xBiFeO3-(1-x) BaTiO3 + ywt% MnO2 (x is more than or equal to 0.60 and less than or equal to 0.75, and y is more than or equal to 0 and less than or equal to 1.50), the ferroelectric memory material has good temperature stability, and a storage function can be stably realized in a temperature range of-50 DEG C to 150 DEG C.
本发明公开了一种铁电存储器材料及其制备方法，是一种铁电陶瓷材料xBiFeO3‑(1‑x)BaTiO3+ywt％MnO2(0.60≤x≤0.75，0≤y≤1.50)，该电铁电存储器温度稳定性较好，在‑50℃至150℃温度范围内均可稳定实现存储功能。
Ferroelectric memory material and preparation method thereof
The invention discloses a ferroelectric memory material and a preparation method thereof, the ferroelectric memory material is a ferroelectric ceramic material xBiFeO3-(1-x) BaTiO3 + ywt% MnO2 (x is more than or equal to 0.60 and less than or equal to 0.75, and y is more than or equal to 0 and less than or equal to 1.50), the ferroelectric memory material has good temperature stability, and a storage function can be stably realized in a temperature range of-50 DEG C to 150 DEG C.
本发明公开了一种铁电存储器材料及其制备方法，是一种铁电陶瓷材料xBiFeO3‑(1‑x)BaTiO3+ywt％MnO2(0.60≤x≤0.75，0≤y≤1.50)，该电铁电存储器温度稳定性较好，在‑50℃至150℃温度范围内均可稳定实现存储功能。
Ferroelectric memory material and preparation method thereof
一种铁电存储器材料及其制备方法
TANG HUI (Autor:in) / WANG RENZHI (Autor:in) / DONG GUIFU (Autor:in) / FAN YU (Autor:in) / JIANG HUILI (Autor:in)
26.12.2023
Patent
Elektronische Ressource
Chinesisch
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