Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Silicon carbide surface treatment method
The invention relates to the technical field of silicon carbide surface treatment, and discloses a silicon carbide surface treatment method which comprises the following steps: grinding and polishing a first surface of a cracked silicon carbide crystal to a flat surface within 2cm; the method comprises the following steps: 1) performing surface activation pretreatment on a carbon-based material to obtain an activated carbon-based material; the silicon carbide surface treatment method comprises the following steps: (1) preparing an activated carbon-based material, (2) coating the surface of the activated carbon-based material with silicon carbide precursor slurry, drying and sintering, and generating a silicon carbide nanowire transition layer on the surface of the activated carbon-based material, and (3) coating the surface of the silicon carbide nanowire transition layer with tantalum carbide precursor slurry. By setting reasonable silicon carbide crystal growth process parameters, crack closing of silicon carbide crystals is realized, a perfect single crystal layer grows on the cracked crystals, a crack-free single crystal layer obtained by crack closing growth is used as a seed crystal to continuously grow silicon carbide single crystals, and then silicon carbide single crystals are obtained by cutting off silicon carbide crystal ingots containing crack parts. And finally obtaining the crack-free silicon carbide crystal ingot.
本发明涉及碳化硅表面处理技术领域，且公开了一种碳化硅表面处理方法，包括以下步骤：将有裂纹碳化硅晶体的第一表面研磨抛光至二厘米内平坦表面；1)将碳基材料进行表面活化预处理，得到活化碳基材料；2)在所述活化碳基材料表面涂布碳化硅前躯体浆料后，进行干燥和烧结，在活化碳基材料表面生成碳化硅纳米线过渡层,3)在所述碳化硅纳米线过渡层表面涂布碳化钽前躯体浆料后，该碳化硅表面处理方法，通过设置合理的碳化硅晶体生长工艺参数，从而实现碳化硅晶体的裂纹闭合，在开裂晶体上长出完美的单晶层，再通过利用裂纹闭合生长得到的无裂纹单晶层作为籽晶，继续来生长碳化硅单晶，然后通过将含裂纹部分的碳化硅晶锭切除，最后得到无裂纹碳化硅晶锭。
Silicon carbide surface treatment method
The invention relates to the technical field of silicon carbide surface treatment, and discloses a silicon carbide surface treatment method which comprises the following steps: grinding and polishing a first surface of a cracked silicon carbide crystal to a flat surface within 2cm; the method comprises the following steps: 1) performing surface activation pretreatment on a carbon-based material to obtain an activated carbon-based material; the silicon carbide surface treatment method comprises the following steps: (1) preparing an activated carbon-based material, (2) coating the surface of the activated carbon-based material with silicon carbide precursor slurry, drying and sintering, and generating a silicon carbide nanowire transition layer on the surface of the activated carbon-based material, and (3) coating the surface of the silicon carbide nanowire transition layer with tantalum carbide precursor slurry. By setting reasonable silicon carbide crystal growth process parameters, crack closing of silicon carbide crystals is realized, a perfect single crystal layer grows on the cracked crystals, a crack-free single crystal layer obtained by crack closing growth is used as a seed crystal to continuously grow silicon carbide single crystals, and then silicon carbide single crystals are obtained by cutting off silicon carbide crystal ingots containing crack parts. And finally obtaining the crack-free silicon carbide crystal ingot.
本发明涉及碳化硅表面处理技术领域，且公开了一种碳化硅表面处理方法，包括以下步骤：将有裂纹碳化硅晶体的第一表面研磨抛光至二厘米内平坦表面；1)将碳基材料进行表面活化预处理，得到活化碳基材料；2)在所述活化碳基材料表面涂布碳化硅前躯体浆料后，进行干燥和烧结，在活化碳基材料表面生成碳化硅纳米线过渡层,3)在所述碳化硅纳米线过渡层表面涂布碳化钽前躯体浆料后，该碳化硅表面处理方法，通过设置合理的碳化硅晶体生长工艺参数，从而实现碳化硅晶体的裂纹闭合，在开裂晶体上长出完美的单晶层，再通过利用裂纹闭合生长得到的无裂纹单晶层作为籽晶，继续来生长碳化硅单晶，然后通过将含裂纹部分的碳化硅晶锭切除，最后得到无裂纹碳化硅晶锭。
Silicon carbide surface treatment method
一种碳化硅表面处理方法
CHEN YUXIANG (Autor:in) / ZHAI HUIYANG (Autor:in) / LI YONGBO (Autor:in) / LI JIHONG (Autor:in)
09.01.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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