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In-situ growth silicon carbide whisker toughened superhigh-temperature ceramic, preparation method and application
The invention belongs to the technical field of ultra-high-temperature ceramics, and discloses an in-situ growth silicon carbide whisker toughened ultra-high-temperature ceramic, a preparation method and application thereof, and the preparation method comprises the following steps: S1, preparing raw materials; s2, ball-milling and step-by-step sintering: putting hafnium boride, zirconium boride, titanium boride, carbon powder and silicon powder into a ball-milling tank for ball-milling, mixing, sieving, then putting into a sintering furnace, firstly heating to a low temperature and a first heat preservation temperature, preserving heat for a first heat preservation time, then pressurizing, then heating to a high temperature and a second heat preservation temperature, preserving heat for a second heat preservation time, and then cooling, the hafnium boride-zirconium boride-titanium boride ultrahigh-temperature ceramic composite material toughened by the in-situ growth silicon carbide whiskers is obtained. According to the invention, the size and quantity of the in-situ growth silicon carbide whiskers are regulated and controlled according to the proportion of the carbon powder and the silicon powder, the total amount of the carbon powder and the silicon powder, the low-temperature heat preservation temperature and the first heat preservation time, the preparation process is simple, the whiskers are uniformly dispersed, and the fracture toughness of the ultrahigh-temperature ceramic can be obviously improved.
本发明属于超高温陶瓷技术领域,公开了一种原位生长碳化硅晶须增韧超高温陶瓷、制备方法即应用,其制备方法包括:S1、制备的原料;S2:球磨和分步烧结,将硼化铪、硼化锆、硼化钛、碳粉、硅粉置于球磨罐中球磨、混合,过筛后置于烧结炉中,先升温至低温、第一保温温度,保温第一保温时间后加压,然后升温至高温、第二保温温度,保温第二保温时间后冷却,得到原位生长碳化硅晶须增韧的硼化铪‑硼化锆‑硼化钛超高温陶瓷复合材料。本发明通过投入碳粉与硅粉的比例、碳粉与硅粉的总量、低温保温的温度与第一保温时间,对原位生长碳化硅晶须的尺寸与数量进行调控,制备工艺简洁,晶须分散均匀,可显著提高超高温陶瓷的断裂韧性。
In-situ growth silicon carbide whisker toughened superhigh-temperature ceramic, preparation method and application
The invention belongs to the technical field of ultra-high-temperature ceramics, and discloses an in-situ growth silicon carbide whisker toughened ultra-high-temperature ceramic, a preparation method and application thereof, and the preparation method comprises the following steps: S1, preparing raw materials; s2, ball-milling and step-by-step sintering: putting hafnium boride, zirconium boride, titanium boride, carbon powder and silicon powder into a ball-milling tank for ball-milling, mixing, sieving, then putting into a sintering furnace, firstly heating to a low temperature and a first heat preservation temperature, preserving heat for a first heat preservation time, then pressurizing, then heating to a high temperature and a second heat preservation temperature, preserving heat for a second heat preservation time, and then cooling, the hafnium boride-zirconium boride-titanium boride ultrahigh-temperature ceramic composite material toughened by the in-situ growth silicon carbide whiskers is obtained. According to the invention, the size and quantity of the in-situ growth silicon carbide whiskers are regulated and controlled according to the proportion of the carbon powder and the silicon powder, the total amount of the carbon powder and the silicon powder, the low-temperature heat preservation temperature and the first heat preservation time, the preparation process is simple, the whiskers are uniformly dispersed, and the fracture toughness of the ultrahigh-temperature ceramic can be obviously improved.
本发明属于超高温陶瓷技术领域,公开了一种原位生长碳化硅晶须增韧超高温陶瓷、制备方法即应用,其制备方法包括:S1、制备的原料;S2:球磨和分步烧结,将硼化铪、硼化锆、硼化钛、碳粉、硅粉置于球磨罐中球磨、混合,过筛后置于烧结炉中,先升温至低温、第一保温温度,保温第一保温时间后加压,然后升温至高温、第二保温温度,保温第二保温时间后冷却,得到原位生长碳化硅晶须增韧的硼化铪‑硼化锆‑硼化钛超高温陶瓷复合材料。本发明通过投入碳粉与硅粉的比例、碳粉与硅粉的总量、低温保温的温度与第一保温时间,对原位生长碳化硅晶须的尺寸与数量进行调控,制备工艺简洁,晶须分散均匀,可显著提高超高温陶瓷的断裂韧性。
In-situ growth silicon carbide whisker toughened superhigh-temperature ceramic, preparation method and application
原位生长碳化硅晶须增韧超高温陶瓷、制备方法与应用
ZHEN QIANG (Autor:in) / YANG HEMING (Autor:in) / MAO XIAODONG (Autor:in)
30.01.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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