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Controllable thermal expansion dielectric ceramic material and preparation method thereof
The invention provides a controllable thermal expansion dielectric ceramic material and a preparation method thereof, and belongs to the technical field of inorganic negative thermal expansion materials. The composition expression of the dielectric ceramic material provided by the invention is Zr < 1-x > Sn < x > Mg Mo < 3 > O < 12 >, wherein x is 0.05-0.25. The dielectric ceramic material provided by the invention has a controllable thermal expansion coefficient in a relatively large range, good dielectric property and relatively low thermal expansion coefficient, can better meet the requirements on thermal matching of silicon-based materials in the aspects of integrated circuits and chip packaging technologies, can be widely applied to the field of electronics, and has relatively wide application prospects.
本发明提供了一种可控热膨胀介电陶瓷材料及其制备方法，属于无机负热膨胀材料技术领域。本发明提供的介电陶瓷材料的组成表达式为Zr1‑xSnxMgMo3O12，式中x为0.05～0.25。本发明提供的介电陶瓷材料具有较大范围内的可控热膨胀系数和良好的介电性能，并且热膨胀系数较低，能够较好的满足于集成电路和芯片封装技术方面对硅基材料热匹配的要求，可供电子领域广泛应用，具有较为广阔的应用前景。
Controllable thermal expansion dielectric ceramic material and preparation method thereof
The invention provides a controllable thermal expansion dielectric ceramic material and a preparation method thereof, and belongs to the technical field of inorganic negative thermal expansion materials. The composition expression of the dielectric ceramic material provided by the invention is Zr < 1-x > Sn < x > Mg Mo < 3 > O < 12 >, wherein x is 0.05-0.25. The dielectric ceramic material provided by the invention has a controllable thermal expansion coefficient in a relatively large range, good dielectric property and relatively low thermal expansion coefficient, can better meet the requirements on thermal matching of silicon-based materials in the aspects of integrated circuits and chip packaging technologies, can be widely applied to the field of electronics, and has relatively wide application prospects.
本发明提供了一种可控热膨胀介电陶瓷材料及其制备方法，属于无机负热膨胀材料技术领域。本发明提供的介电陶瓷材料的组成表达式为Zr1‑xSnxMgMo3O12，式中x为0.05～0.25。本发明提供的介电陶瓷材料具有较大范围内的可控热膨胀系数和良好的介电性能，并且热膨胀系数较低，能够较好的满足于集成电路和芯片封装技术方面对硅基材料热匹配的要求，可供电子领域广泛应用，具有较为广阔的应用前景。
Controllable thermal expansion dielectric ceramic material and preparation method thereof
一种可控热膨胀介电陶瓷材料及其制备方法
YANG MENGJIE (Autor:in) / ZHAO YIMING (Autor:in) / TIAN HENGRUI (Autor:in) / LI MINGYU (Autor:in) / JEON DONG CHUL (Autor:in) / CHEN DONGXIA (Autor:in) / WANG WENJING (Autor:in) / YANG HUAN (Autor:in)
01.03.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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