Oxide sintered body, preparation method thereof, oxide target material and application: Fid-Bau Portal

Oxide sintered body, preparation method thereof, oxide target material and application

XU HUA / YANG KAIXIA

The invention discloses an oxide sintered body, a preparation method thereof, an oxide target material and application, and relates to the technical field of semiconductors. A rare earth oxide and a second metal compound are introduced into an indium oxide sintered body, the second metal compound is a metal oxide and/or a metal fluoride, on one hand, a coupling electron channel can be formed by the second metal compound and an indium electron track of indium oxide, the characteristics of a manufactured film are improved, and the performance of a device is improved; and on the other hand, the rare earth oxide forms tiny crystal grains which are embedded into gaps of the crystal grains of the main body material to form a compact sintered body, so that the highly compact ceramic target material can be obtained. According to the oxide sintered body provided by the invention, a high-density sintered body or target material can be obtained by optimizing the composition and the preparation method, so that the grain size is controllable and the grain distribution is controllable.

本发明公开了一种氧化物烧结体及其制备方法、氧化物靶材及应用，涉及半导体技术领域。通过在氧化铟烧结体中引入稀土氧化物和第二金属化合物，第二金属化合物为金属氧化物和/或金属氟化物，一方面可以和氧化铟的铟电子轨道形成耦合电子通道，改善其所制作的薄膜特性，提升器件性能；另一方面，稀土氧化物形成微小晶粒嵌入主体材料晶粒的间隙，形成致密的烧结体，从而能获得高度致密的陶瓷靶材。本发明提供的氧化物烧结体通过优化组成和制备方法，可以获得高致密度的烧结体或靶材，有利于使晶粒尺寸可控且分布可控。

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