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Mg-Ti-O-based high-Q high-thermal-conductivity microwave dielectric ceramic material and preparation method thereof
The invention belongs to the technical field of electronic materials, and particularly relates to an Mg-Ti-O-based high-Q high-thermal-conductivity microwave dielectric ceramic material and a preparation method thereof. According to the ceramic material disclosed by the invention, a solid-phase reaction method is adopted, Mg2TiO4 is doped with TiO2 to generate a sub-crystalline phase MgTiO3 with a high Q value and a high heat conductivity coefficient, and the microstructure and density of the whole material are improved through a composite ceramic system, so that the heat conductivity and the Q * f value of the ceramic material are improved; according to the (1-y) Mg2TiO4 + yMgTiO3 ceramic material prepared by the invention, y is more than 0 and less than 0.5, the thermal conductivity is 8.0-10.5 W/(m.K), the Q * f value is 100000-150000 GHz, and the relative dielectric constant is 14-16. The Mg-Ti-O-based high-Q high-thermal-conductivity microwave dielectric ceramic material disclosed by the invention is simple in preparation process, has relatively high thermal conductivity and Q * f value and proper dielectric constant, and can be applied to the field of electronic packaging as a multilayer ceramic component material and a circuit substrate material.
本发明属于电子材料技术领域,具体为一种Mg‑Ti‑O基高Q高导热微波介电陶瓷材料及其制备方法。本发明陶瓷材料采用固相反应法,通过对Mg2TiO4掺杂TiO2生成具备高Q值和高导热系数的次晶相MgTiO3,通过复合陶瓷体系改善了整体材料的微观结构和致密度,进而提高了陶瓷材料的热导率和Q×f值;本发明制备的(1‑y)Mg2TiO4+yMgTiO3陶瓷材料,0<y<0.5,其热导率为8.0~10.5W/(m·K),Q×f值为100000~150000GHz,相对介电常数为14~16。本发明的Mg‑Ti‑O基高Q高导热微波介电陶瓷材料制备工艺简单、具有较高的热导率和Q×f值以及适当的介电常数,可作为多层陶瓷元器件材料和电路基板材料应用于电子封装领域。
Mg-Ti-O-based high-Q high-thermal-conductivity microwave dielectric ceramic material and preparation method thereof
The invention belongs to the technical field of electronic materials, and particularly relates to an Mg-Ti-O-based high-Q high-thermal-conductivity microwave dielectric ceramic material and a preparation method thereof. According to the ceramic material disclosed by the invention, a solid-phase reaction method is adopted, Mg2TiO4 is doped with TiO2 to generate a sub-crystalline phase MgTiO3 with a high Q value and a high heat conductivity coefficient, and the microstructure and density of the whole material are improved through a composite ceramic system, so that the heat conductivity and the Q * f value of the ceramic material are improved; according to the (1-y) Mg2TiO4 + yMgTiO3 ceramic material prepared by the invention, y is more than 0 and less than 0.5, the thermal conductivity is 8.0-10.5 W/(m.K), the Q * f value is 100000-150000 GHz, and the relative dielectric constant is 14-16. The Mg-Ti-O-based high-Q high-thermal-conductivity microwave dielectric ceramic material disclosed by the invention is simple in preparation process, has relatively high thermal conductivity and Q * f value and proper dielectric constant, and can be applied to the field of electronic packaging as a multilayer ceramic component material and a circuit substrate material.
本发明属于电子材料技术领域,具体为一种Mg‑Ti‑O基高Q高导热微波介电陶瓷材料及其制备方法。本发明陶瓷材料采用固相反应法,通过对Mg2TiO4掺杂TiO2生成具备高Q值和高导热系数的次晶相MgTiO3,通过复合陶瓷体系改善了整体材料的微观结构和致密度,进而提高了陶瓷材料的热导率和Q×f值;本发明制备的(1‑y)Mg2TiO4+yMgTiO3陶瓷材料,0<y<0.5,其热导率为8.0~10.5W/(m·K),Q×f值为100000~150000GHz,相对介电常数为14~16。本发明的Mg‑Ti‑O基高Q高导热微波介电陶瓷材料制备工艺简单、具有较高的热导率和Q×f值以及适当的介电常数,可作为多层陶瓷元器件材料和电路基板材料应用于电子封装领域。
Mg-Ti-O-based high-Q high-thermal-conductivity microwave dielectric ceramic material and preparation method thereof
一种Mg-Ti-O基高Q高导热微波介电陶瓷材料及其制备方法
LI YUANXUN (Autor:in) / LIU XINYAN (Autor:in) / LI FUYU (Autor:in) / RUAN LIMEI (Autor:in) / SU HUA (Autor:in) / HAN LIKUN (Autor:in) / LIAO YULONG (Autor:in)
05.04.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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