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The invention discloses a method for preparing high-strength silicon carbide with controllable free silicon content through reactive sintering, which comprises the following steps: 1) mixing two kinds of silicon carbide powder with different particle sizes, a carbon source, an additive and pure water, and stirring for a period of time to obtain a wet material; 2) performing extrusion molding to obtain a sample blank; 3) drying; (4) CNC machining, wherein the formed blank is machined into the size and shape of a product; 5) vacuum sintering: placing the sample blank in a graphite lining plate, placing the graphite lining plate in a sintering furnace, heating to a specified temperature, and carrying out heat preservation and cooling to room temperature to obtain a sintered body; according to the method, the content of the free silicon is accurately controlled, and the problem that the content of the free silicon is unstable is solved.
本发明公开了一种通过反应烧结制备高强度可控游离硅含量的碳化硅制备方法,包括以下步骤:1)将两种不同粒径的碳化硅粉体、碳源、添加剂与纯水进行混合,搅拌一段时间后得到湿料;2)挤出成型,得到样品毛坯;3)干燥;4)CNC加工,将成型毛坯加工成产品的尺寸和形状;5)真空烧结,将样品毛坯置于石墨衬板装入烧结炉中,升温至规定温度,保温冷却到室温得到烧结体;本发明实现对游离硅含量的精确控制,解决了游离硅含量不稳定的问题。
The invention discloses a method for preparing high-strength silicon carbide with controllable free silicon content through reactive sintering, which comprises the following steps: 1) mixing two kinds of silicon carbide powder with different particle sizes, a carbon source, an additive and pure water, and stirring for a period of time to obtain a wet material; 2) performing extrusion molding to obtain a sample blank; 3) drying; (4) CNC machining, wherein the formed blank is machined into the size and shape of a product; 5) vacuum sintering: placing the sample blank in a graphite lining plate, placing the graphite lining plate in a sintering furnace, heating to a specified temperature, and carrying out heat preservation and cooling to room temperature to obtain a sintered body; according to the method, the content of the free silicon is accurately controlled, and the problem that the content of the free silicon is unstable is solved.
本发明公开了一种通过反应烧结制备高强度可控游离硅含量的碳化硅制备方法,包括以下步骤:1)将两种不同粒径的碳化硅粉体、碳源、添加剂与纯水进行混合,搅拌一段时间后得到湿料;2)挤出成型,得到样品毛坯;3)干燥;4)CNC加工,将成型毛坯加工成产品的尺寸和形状;5)真空烧结,将样品毛坯置于石墨衬板装入烧结炉中,升温至规定温度,保温冷却到室温得到烧结体;本发明实现对游离硅含量的精确控制,解决了游离硅含量不稳定的问题。
Method for preparing high-strength silicon carbide with controllable free silicon content through reactive sintering
一种通过反应烧结制备高强度可控游离硅含量的碳化硅制备方法
ZHOU WEI (Autor:in)
05.04.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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