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Broadband wave-transparent sandwich structure silicon nitride-based ceramic material and preparation method thereof
The invention discloses a broadband wave-transparent sandwich structure silicon nitride-based ceramic material and a preparation method thereof.The broadband wave-transparent sandwich structure silicon nitride-based ceramic material comprises an upper surface layer, a lower surface layer and a silicon nitride core layer located between the upper surface layer and the lower surface layer and connected with the upper surface layer and the lower surface layer; the microstructures of the silicon nitride core layer, the upper surface layer and the lower surface layer are beta-Si3N4 columnar crystal grain lap-joint networks and intergranular micropores; the porosity of the upper surface layer and the porosity of the lower surface layer are both lower than the porosity of the silicon nitride core layer. The dielectric constants of the upper surface layer and the lower surface layer are 3.8-4.6, and the thicknesses of the upper surface layer and the lower surface layer are 0.8-2.2 mm; the dielectric constant of the silicon nitride core layer is 2.0-3.0; the interlayer interface bonding strength of the upper surface layer, the lower surface layer and the silicon nitride core layer is greater than or equal to 20MPa; high temperature resistance and broadband wave transmission integration of wave-transmitting ceramic made of a single ceramic material are realized, the long-term temperature resistance can reach 1400 DEG C, and the dual-band wave transmission rate is greater than or equal to 80%.
本发明公开了一种宽频透波夹层结构氮化硅基陶瓷材料及其制备方法，所述宽频透波夹层结构氮化硅基陶瓷材料，包括上表层、下表层，以及位于上表层与下表层之间连接上表层与下表层的氮化硅芯层；所述氮化硅芯层、上表层、下表层微结构均为β‑Si3N4柱状晶粒搭接网络及晶间微孔隙；所述上表层与下表层的孔隙率均低于氮化硅芯层的孔隙率；所述上表层、下表层的介电常数均为3.8～4.6，厚度均为0.8‑2.2mm；所述氮化硅芯层的介电常数为2.0～3.0；所述上表层、下表层与氮化硅芯层层间界面结合强度≥20MPa；实现单种陶瓷材质的透波陶瓷耐高温、宽频透波一体化，长时耐温达1400℃，双频段透波率≥80％。
Broadband wave-transparent sandwich structure silicon nitride-based ceramic material and preparation method thereof
The invention discloses a broadband wave-transparent sandwich structure silicon nitride-based ceramic material and a preparation method thereof.The broadband wave-transparent sandwich structure silicon nitride-based ceramic material comprises an upper surface layer, a lower surface layer and a silicon nitride core layer located between the upper surface layer and the lower surface layer and connected with the upper surface layer and the lower surface layer; the microstructures of the silicon nitride core layer, the upper surface layer and the lower surface layer are beta-Si3N4 columnar crystal grain lap-joint networks and intergranular micropores; the porosity of the upper surface layer and the porosity of the lower surface layer are both lower than the porosity of the silicon nitride core layer. The dielectric constants of the upper surface layer and the lower surface layer are 3.8-4.6, and the thicknesses of the upper surface layer and the lower surface layer are 0.8-2.2 mm; the dielectric constant of the silicon nitride core layer is 2.0-3.0; the interlayer interface bonding strength of the upper surface layer, the lower surface layer and the silicon nitride core layer is greater than or equal to 20MPa; high temperature resistance and broadband wave transmission integration of wave-transmitting ceramic made of a single ceramic material are realized, the long-term temperature resistance can reach 1400 DEG C, and the dual-band wave transmission rate is greater than or equal to 80%.
本发明公开了一种宽频透波夹层结构氮化硅基陶瓷材料及其制备方法，所述宽频透波夹层结构氮化硅基陶瓷材料，包括上表层、下表层，以及位于上表层与下表层之间连接上表层与下表层的氮化硅芯层；所述氮化硅芯层、上表层、下表层微结构均为β‑Si3N4柱状晶粒搭接网络及晶间微孔隙；所述上表层与下表层的孔隙率均低于氮化硅芯层的孔隙率；所述上表层、下表层的介电常数均为3.8～4.6，厚度均为0.8‑2.2mm；所述氮化硅芯层的介电常数为2.0～3.0；所述上表层、下表层与氮化硅芯层层间界面结合强度≥20MPa；实现单种陶瓷材质的透波陶瓷耐高温、宽频透波一体化，长时耐温达1400℃，双频段透波率≥80％。
Broadband wave-transparent sandwich structure silicon nitride-based ceramic material and preparation method thereof
一种宽频透波夹层结构氮化硅基陶瓷材料及其制备方法
ZHU BAOXIN (Autor:in) / WANG HONGSHENG (Autor:in) / XU DANDAN (Autor:in) / ZHANG WEIRU (Autor:in) / CAO JUNCHANG (Autor:in) / SHAO CHANGTAO (Autor:in) / WEI QIHONG (Autor:in) / WANG TONGTONG (Autor:in) / GAI YING (Autor:in) / LIU YUANYUAN (Autor:in)
14.05.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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