Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
The invention relates to silicon carbide and a preparation method thereof, silicon carbide ceramic and a semiconductor device. The preparation method of the silicon carbide comprises the following preparation steps that under the inert atmosphere condition, silicon powder and carbon powder are mixed in an acoustic resonance mixing mode, then pressing treatment is conducted, a mixture blank is obtained, and the average particle size of the silicon powder is 10-200 microns; carrying out solid-phase carbonization treatment on the mixture blank under a vacuum condition; the solid-phase carbonization treatment condition comprises a pre-heating stage, a silicon powder melting stage and a solid-phase carbonization reaction stage which are sequentially carried out, the vacuum air pressure of the silicon powder melting stage is greater than that of the initial heating stage, and the vacuum air pressure of the silicon powder melting stage is greater than that of the solid-phase carbonization reaction stage. Silicon powder and carbon powder are mixed and pressed under the inert atmosphere condition, in the solid-phase carbonization treatment process, pre-heating, silicon powder melting and vacuum air pressure in the solid-phase carbonization reaction stage are controlled, silicon carbide high in purity and low in nitrogen content is obtained, and meanwhile the Si/C ratio of the silicon carbide is accurately controlled.
本发明涉及一种碳化硅及其制备方法、碳化硅陶瓷及半导体器件。该碳化硅的制备方法包括如下制备步骤：在惰性气氛条件下，将硅粉与碳粉采用声共振混合方式进行混合，然后进行压制处理，得到混合料坯体，硅粉的平均粒径为10μm~200μm；将混合料坯体在真空条件下进行固相碳化处理；固相碳化处理条件包括依次进行的预升温阶段、硅粉熔融阶段以及固相碳化反应阶段，硅粉熔融阶段的真空气压大于初始升温阶段的真空气压，硅粉熔融阶段的真空气压大于固相碳化反应阶段的真空气压。在惰性气氛条件下将硅粉与碳粉混合并压制，在固相碳化处理过程中控制预升温、硅粉熔融及固相碳化反应阶段的真空气压，得到纯度较高、氮含量较低的碳化硅，同时精准控制碳化硅的Si/C比。
The invention relates to silicon carbide and a preparation method thereof, silicon carbide ceramic and a semiconductor device. The preparation method of the silicon carbide comprises the following preparation steps that under the inert atmosphere condition, silicon powder and carbon powder are mixed in an acoustic resonance mixing mode, then pressing treatment is conducted, a mixture blank is obtained, and the average particle size of the silicon powder is 10-200 microns; carrying out solid-phase carbonization treatment on the mixture blank under a vacuum condition; the solid-phase carbonization treatment condition comprises a pre-heating stage, a silicon powder melting stage and a solid-phase carbonization reaction stage which are sequentially carried out, the vacuum air pressure of the silicon powder melting stage is greater than that of the initial heating stage, and the vacuum air pressure of the silicon powder melting stage is greater than that of the solid-phase carbonization reaction stage. Silicon powder and carbon powder are mixed and pressed under the inert atmosphere condition, in the solid-phase carbonization treatment process, pre-heating, silicon powder melting and vacuum air pressure in the solid-phase carbonization reaction stage are controlled, silicon carbide high in purity and low in nitrogen content is obtained, and meanwhile the Si/C ratio of the silicon carbide is accurately controlled.
本发明涉及一种碳化硅及其制备方法、碳化硅陶瓷及半导体器件。该碳化硅的制备方法包括如下制备步骤：在惰性气氛条件下，将硅粉与碳粉采用声共振混合方式进行混合，然后进行压制处理，得到混合料坯体，硅粉的平均粒径为10μm~200μm；将混合料坯体在真空条件下进行固相碳化处理；固相碳化处理条件包括依次进行的预升温阶段、硅粉熔融阶段以及固相碳化反应阶段，硅粉熔融阶段的真空气压大于初始升温阶段的真空气压，硅粉熔融阶段的真空气压大于固相碳化反应阶段的真空气压。在惰性气氛条件下将硅粉与碳粉混合并压制，在固相碳化处理过程中控制预升温、硅粉熔融及固相碳化反应阶段的真空气压，得到纯度较高、氮含量较低的碳化硅，同时精准控制碳化硅的Si/C比。
Silicon carbide and preparation method thereof, silicon carbide ceramic and semiconductor device
碳化硅及其制备方法、碳化硅陶瓷及半导体器件
05.07.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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