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N-type Mg3Bi2-based thermoelectric material and preparation method thereof
The invention provides an n-type Mg3Bi2-based thermoelectric material and a preparation method thereof, and belongs to the technical field of thermoelectric materials. The chemical composition of the n-type Mg < 3 > Bi < 2 >-based thermoelectric material provided by the invention is Mg < 3.2-x > Er < x > Bi < 1.4 > Sb < 0.6-y > Se < y >, x is less than or equal to 0.04, 0lt; and y < = 0.02. The thermoelectric material provided by the invention is doped with the Se element, so that the carrier concentration can be effectively improved, the power factor is improved, and the thermoelectric figure of merit of the thermoelectric material is improved; the Er element is used as a cation doping agent, so that the carrier concentration is effectively regulated and controlled, and the conductivity of the thermoelectric material can be greatly improved; meanwhile, the difference between the atomic mass of Er and the atomic mass of Mg is large, fluctuation of a mass field and a stress field is caused, phonon scattering is enhanced, and therefore the lattice heat conductivity is reduced, and the thermoelectric performance is further improved. The result shows that the maximum thermoelectric figure of merit of the n-type Mg3Bi2-based thermoelectric material provided by the invention at 523K is about 1.0.
本发明提供了一种n型Mg3Bi2基热电材料及其制备方法，属于热电材料技术领域。本发明提供的n型Mg3Bi2基热电材料化学组成为Mg3.2‑xErxBi1.4Sb0.6‑ySey，其中0
N-type Mg3Bi2-based thermoelectric material and preparation method thereof
The invention provides an n-type Mg3Bi2-based thermoelectric material and a preparation method thereof, and belongs to the technical field of thermoelectric materials. The chemical composition of the n-type Mg < 3 > Bi < 2 >-based thermoelectric material provided by the invention is Mg < 3.2-x > Er < x > Bi < 1.4 > Sb < 0.6-y > Se < y >, x is less than or equal to 0.04, 0lt; and y < = 0.02. The thermoelectric material provided by the invention is doped with the Se element, so that the carrier concentration can be effectively improved, the power factor is improved, and the thermoelectric figure of merit of the thermoelectric material is improved; the Er element is used as a cation doping agent, so that the carrier concentration is effectively regulated and controlled, and the conductivity of the thermoelectric material can be greatly improved; meanwhile, the difference between the atomic mass of Er and the atomic mass of Mg is large, fluctuation of a mass field and a stress field is caused, phonon scattering is enhanced, and therefore the lattice heat conductivity is reduced, and the thermoelectric performance is further improved. The result shows that the maximum thermoelectric figure of merit of the n-type Mg3Bi2-based thermoelectric material provided by the invention at 523K is about 1.0.
本发明提供了一种n型Mg3Bi2基热电材料及其制备方法，属于热电材料技术领域。本发明提供的n型Mg3Bi2基热电材料化学组成为Mg3.2‑xErxBi1.4Sb0.6‑ySey，其中0
N-type Mg3Bi2-based thermoelectric material and preparation method thereof
一种n型Mg3Bi2基热电材料及其制备方法
KANG HUIJUN (Autor:in) / WANG TONGMIN (Autor:in) / YAN YU (Autor:in) / GUO ENYU (Autor:in) / CHEN ZONGNING (Autor:in) / LU YIPING (Autor:in) / JIE JINCHUAN (Autor:in) / ZHANG YUBO (Autor:in) / CAO ZHIQIANG (Autor:in) / LI TINGJU (Autor:in)
12.07.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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