Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
N-type bismuth telluride-based thermoelectric material and preparation method thereof
The invention relates to a high-performance n-type bismuth telluride-based thermoelectric material and a preparation method thereof, and belongs to the technical field of thermoelectric conversion. The chemical composition of the n-type bismuth telluride-based thermoelectric material is LayBi2-yTe2. 7Se0.3-xwt% Te, x is greater than or equal to 0 and less than or equal to 1.5, y is greater than or equal to 0 and less than or equal to 0.015, and x and y are not 0 at the same time. On the premise of fixing the Se doping amount, the Te element is reduced to increase the Te vacancy, the carrier concentration is reduced to enable the peak value of the dimensionless thermoelectric figure of merit zT to move towards the low-temperature direction, meanwhile, La is used for doping Bi to optimize the electric heat transport performance, and finally the zT value is obviously improved.
本发明涉及一种高性能n型碲化铋基热电材料及其制备方法，属于热电转换技术领域。所述n型碲化铋基热电材料的化学组成为LayBi2‑yTe2.7Se0.3‑xwt％Te，0≤x≤1.5，0≤y≤0.015，x,y不同时为0。本发明在固定Se掺杂量的前提下，减少Te元素以增加Te空位，降低载流子浓度使得无量纲热电优值zT峰值向低温方向移动，同时利用La掺杂Bi以优化电热输运性能，最终实现zT值的明显提高。
N-type bismuth telluride-based thermoelectric material and preparation method thereof
The invention relates to a high-performance n-type bismuth telluride-based thermoelectric material and a preparation method thereof, and belongs to the technical field of thermoelectric conversion. The chemical composition of the n-type bismuth telluride-based thermoelectric material is LayBi2-yTe2. 7Se0.3-xwt% Te, x is greater than or equal to 0 and less than or equal to 1.5, y is greater than or equal to 0 and less than or equal to 0.015, and x and y are not 0 at the same time. On the premise of fixing the Se doping amount, the Te element is reduced to increase the Te vacancy, the carrier concentration is reduced to enable the peak value of the dimensionless thermoelectric figure of merit zT to move towards the low-temperature direction, meanwhile, La is used for doping Bi to optimize the electric heat transport performance, and finally the zT value is obviously improved.
本发明涉及一种高性能n型碲化铋基热电材料及其制备方法，属于热电转换技术领域。所述n型碲化铋基热电材料的化学组成为LayBi2‑yTe2.7Se0.3‑xwt％Te，0≤x≤1.5，0≤y≤0.015，x,y不同时为0。本发明在固定Se掺杂量的前提下，减少Te元素以增加Te空位，降低载流子浓度使得无量纲热电优值zT峰值向低温方向移动，同时利用La掺杂Bi以优化电热输运性能，最终实现zT值的明显提高。
N-type bismuth telluride-based thermoelectric material and preparation method thereof
一种n型碲化铋基热电材料及其制备方法
SONG QINGFENG (Autor:in) / BAI SHENGQIANG (Autor:in) / XIA XUGUI (Autor:in) / LIAO JINCHENG (Autor:in)
23.07.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
P-type bismuth telluride thermoelectric material and preparation method thereof
| Europäisches Patentamt | 2020
P-type bismuth telluride-based thermoelectric material and macro preparation method thereof
| Europäisches Patentamt | 2024
Preparation method of bismuth telluride-based thermoelectric material
| Europäisches Patentamt | 2021
| Europäisches Patentamt | 2023
| Europäisches Patentamt | 2023