Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Vacuum insulating ceramic with high surface flashover voltage and preparation method thereof
The invention discloses vacuum insulating ceramic with high surface flashover voltage and a preparation method thereof, and provides preparation of Si3N4 vacuum insulating ceramic aiming at the problems that the existing vacuum insulating ceramic (such as Al2O3 ceramic) is high in secondary electron emission coefficient and low in surface flashover voltage, and surface breakdown is easy to occur in a pulse power system to cause equipment failure. The method comprises the following steps: taking Si3N4 powder as a raw material, adding SiO2 and Y2O3 as sintering aids, and carrying out hot pressed sintering in a nitrogen atmosphere at the sintering temperature of 1700-1800 DEG C under the sintering pressure of 30 MPa; according to the invention, the Si3N4 vacuum insulating ceramic with low secondary electron emission coefficient and high surface flashover voltage can be prepared, and the Si3N4 vacuum insulating ceramic can be widely applied to pulse power equipment.
本发明公开了一种具有高沿面闪络电压的真空绝缘陶瓷及其制备方法，针对现有真空绝缘陶瓷(如Al2O3陶瓷)二次电子发射系数高、沿面闪络电压低、在脉冲功率系统中容易发生表面击穿而使设备失效的问题，提出制备Si3N4真空绝缘陶瓷；该方法包括：以Si3N4粉末为原料，添加SiO2和Y2O3作为烧结助剂，在氮气气氛中热压烧结，烧结温度为1700～1800℃，烧结压力为30MPa；本发明可以制备出具有低二次电子发射系数和高沿面闪络电压的Si3N4真空绝缘陶瓷，能够广泛应用于脉冲功率设备中。
Vacuum insulating ceramic with high surface flashover voltage and preparation method thereof
The invention discloses vacuum insulating ceramic with high surface flashover voltage and a preparation method thereof, and provides preparation of Si3N4 vacuum insulating ceramic aiming at the problems that the existing vacuum insulating ceramic (such as Al2O3 ceramic) is high in secondary electron emission coefficient and low in surface flashover voltage, and surface breakdown is easy to occur in a pulse power system to cause equipment failure. The method comprises the following steps: taking Si3N4 powder as a raw material, adding SiO2 and Y2O3 as sintering aids, and carrying out hot pressed sintering in a nitrogen atmosphere at the sintering temperature of 1700-1800 DEG C under the sintering pressure of 30 MPa; according to the invention, the Si3N4 vacuum insulating ceramic with low secondary electron emission coefficient and high surface flashover voltage can be prepared, and the Si3N4 vacuum insulating ceramic can be widely applied to pulse power equipment.
本发明公开了一种具有高沿面闪络电压的真空绝缘陶瓷及其制备方法，针对现有真空绝缘陶瓷(如Al2O3陶瓷)二次电子发射系数高、沿面闪络电压低、在脉冲功率系统中容易发生表面击穿而使设备失效的问题，提出制备Si3N4真空绝缘陶瓷；该方法包括：以Si3N4粉末为原料，添加SiO2和Y2O3作为烧结助剂，在氮气气氛中热压烧结，烧结温度为1700～1800℃，烧结压力为30MPa；本发明可以制备出具有低二次电子发射系数和高沿面闪络电压的Si3N4真空绝缘陶瓷，能够广泛应用于脉冲功率设备中。
Vacuum insulating ceramic with high surface flashover voltage and preparation method thereof
一种具有高沿面闪络电压的真空绝缘陶瓷及其制备方法
WANG HONGJIE (Autor:in) / CHANG BOYANG (Autor:in) / NIU MIN (Autor:in) / SU LEI (Autor:in) / PENG KANG (Autor:in) / LU DE (Autor:in)
02.08.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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