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Method for quickly connecting silicon carbide
The invention belongs to the technical field of connection of silicon carbide materials, and particularly relates to a method for rapidly connecting silicon carbide. The method for quickly connecting silicon carbide comprises the following steps: arranging an intermediate layer between two silicon carbide materials to be connected, placing the two silicon carbide materials to be connected with the intermediate layer between two heating materials, contacting the silicon carbide materials with the heating materials, and connecting the heating materials with an electrode of a power supply to form a loop, and connection is carried out after electrification. The heating material is used as a heat source and rapidly generates a large amount of joule heat after being powered on, the temperature of silicon carbide is instantly increased through heat conduction and heat radiation, and rapid connection of the silicon carbide is achieved under the action of the middle layer.
本发明属于碳化硅材料的连接技术领域,具体涉及一种快速连接碳化硅的方法。所述快速连接碳化硅的方法,包括以下步骤:在两件待连接的碳化硅材料中间设置中间层,再将夹有中间层的两件待连接的碳化硅材料置于两件发热材料之间,且碳化硅材料与发热材料接触,发热材料与电源的电极相连形成回路,通电后进行连接。以发热材料为热源,接通电源后发热材料快速产生大量焦耳热,通过热传导和热辐射作用使碳化硅温度瞬间升高,在中间层的作用下,实现碳化硅的快速连接。
Method for quickly connecting silicon carbide
The invention belongs to the technical field of connection of silicon carbide materials, and particularly relates to a method for rapidly connecting silicon carbide. The method for quickly connecting silicon carbide comprises the following steps: arranging an intermediate layer between two silicon carbide materials to be connected, placing the two silicon carbide materials to be connected with the intermediate layer between two heating materials, contacting the silicon carbide materials with the heating materials, and connecting the heating materials with an electrode of a power supply to form a loop, and connection is carried out after electrification. The heating material is used as a heat source and rapidly generates a large amount of joule heat after being powered on, the temperature of silicon carbide is instantly increased through heat conduction and heat radiation, and rapid connection of the silicon carbide is achieved under the action of the middle layer.
本发明属于碳化硅材料的连接技术领域,具体涉及一种快速连接碳化硅的方法。所述快速连接碳化硅的方法,包括以下步骤:在两件待连接的碳化硅材料中间设置中间层,再将夹有中间层的两件待连接的碳化硅材料置于两件发热材料之间,且碳化硅材料与发热材料接触,发热材料与电源的电极相连形成回路,通电后进行连接。以发热材料为热源,接通电源后发热材料快速产生大量焦耳热,通过热传导和热辐射作用使碳化硅温度瞬间升高,在中间层的作用下,实现碳化硅的快速连接。
Method for quickly connecting silicon carbide
一种快速连接碳化硅的方法
ZHOU XIAOBING (Autor:in) / XU JIE (Autor:in) / HUANG QING (Autor:in)
16.08.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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