Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Silicon carbide coating material and preparation method thereof
The invention relates to the technical field of semiconductor materials, and provides a silicon carbide material and a preparation method thereof. The silicon carbide coating material comprises a carbon substrate and a silicon carbide composite coating arranged on the surface of the carbon substrate, wherein the silicon carbide composite coating comprises at least two silicon carbide inner coatings with different silicon contents and at least one silicon carbide outer coating with basically unchanged silicon content; in the silicon carbide composite coating, the silicon content of the silicon carbide inner coating is gradually increased along the growth direction of the silicon carbide inner coating; the molar ratio of C to Si in the silicon carbide inner coating is 1: (0.4-1.1); and in the silicon carbide outer coating, the C/Si molar ratio is 1: (0.9-1.1). The silicon carbide coating material is provided with the silicon carbide inner coating in gradient distribution, a gradient interface is formed, the interface defects of the silicon carbide coating and graphite are reduced, the cracking and falling risks of the coating are reduced, and the stability of the silicon carbide coating is improved.
本发明涉及半导体材料的技术领域，提供了一种碳化硅材料及其制备方法。该碳化硅涂层材料包括碳基底及设置于碳基体表面的碳化硅复合涂层，碳化硅复合涂层包括至少两层硅含量不同的碳化硅内涂层和至少一层硅含量基本不变的碳化硅外涂层；碳化硅复合涂层中，碳化硅内涂层的硅含量沿碳化硅内涂层的生长方向逐渐提高；所述碳化硅内涂层中C/Si摩尔比为1:(0.4‑1.1)；所述碳化硅外涂层中，C/Si摩尔比为1:(0.9‑1.1)。该碳化硅涂层材料具有梯度分布的碳化硅内涂层，形成梯度界面，减少碳化硅涂层与石墨的界面缺陷，降低涂层开裂和脱落的风险，提高碳化硅涂层的稳定性。
Silicon carbide coating material and preparation method thereof
The invention relates to the technical field of semiconductor materials, and provides a silicon carbide material and a preparation method thereof. The silicon carbide coating material comprises a carbon substrate and a silicon carbide composite coating arranged on the surface of the carbon substrate, wherein the silicon carbide composite coating comprises at least two silicon carbide inner coatings with different silicon contents and at least one silicon carbide outer coating with basically unchanged silicon content; in the silicon carbide composite coating, the silicon content of the silicon carbide inner coating is gradually increased along the growth direction of the silicon carbide inner coating; the molar ratio of C to Si in the silicon carbide inner coating is 1: (0.4-1.1); and in the silicon carbide outer coating, the C/Si molar ratio is 1: (0.9-1.1). The silicon carbide coating material is provided with the silicon carbide inner coating in gradient distribution, a gradient interface is formed, the interface defects of the silicon carbide coating and graphite are reduced, the cracking and falling risks of the coating are reduced, and the stability of the silicon carbide coating is improved.
本发明涉及半导体材料的技术领域，提供了一种碳化硅材料及其制备方法。该碳化硅涂层材料包括碳基底及设置于碳基体表面的碳化硅复合涂层，碳化硅复合涂层包括至少两层硅含量不同的碳化硅内涂层和至少一层硅含量基本不变的碳化硅外涂层；碳化硅复合涂层中，碳化硅内涂层的硅含量沿碳化硅内涂层的生长方向逐渐提高；所述碳化硅内涂层中C/Si摩尔比为1:(0.4‑1.1)；所述碳化硅外涂层中，C/Si摩尔比为1:(0.9‑1.1)。该碳化硅涂层材料具有梯度分布的碳化硅内涂层，形成梯度界面，减少碳化硅涂层与石墨的界面缺陷，降低涂层开裂和脱落的风险，提高碳化硅涂层的稳定性。
Silicon carbide coating material and preparation method thereof
一种碳化硅涂层材料及其制备方法
LIAO JIAHAO (Autor:in) / GUO MIANHUI (Autor:in) / CHAI PAN (Autor:in) / WAN QIANG (Autor:in)
16.08.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
| Europäisches Patentamt | 2024
Silicon carbide reinforced silicon carbide composite material and preparation method thereof
| Europäisches Patentamt | 2024
Silicon carbide material and preparation method thereof
| Europäisches Patentamt | 2024
Silicon carbide coating graphite base and preparation method thereof
| Europäisches Patentamt | 2022
Silicon carbide coating for sagger and preparation method thereof
| Europäisches Patentamt | 2020