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Preparation method of high-density vertically-oriented graphene and thermal interface application of high-density vertically-oriented graphene
The invention discloses a high-density vertically-oriented graphene material as well as a preparation method and application thereof, and the high-density vertically-oriented graphene material is mainly characterized in that the high-density vertically-oriented graphene material is formed on a high-density active substrate through plasma enhanced chemical vapor deposition growth. The density of the obtained material is high (0.18-0.6 g/cm < 3 >), and the problem that the density of the vertically-oriented graphene material prepared at present is difficult to increase is solved. The thermal conductivity of the material is more than 200W/mK, and the material can be applied to thermal interface materials. In addition, the device can be processed into an array form for an X-ray cold cathode. According to the method, batch production can be carried out by means of existing common equipment, the used substrate can be reused, and the method has the advantages of being simple and easy to obtain, high in flexibility, low in cost, easy to industrialize and the like, and has wide application prospects in scenes of high-end heat dissipation, electron emission materials and the like.
本发明公开了一种高密度垂直取向石墨烯材料及其制备方法和应用,其主要特点为通过在高密度的活性基底上,通过离子体增强化学气相沉积生长形成高密度垂直取向石墨烯材料。所得材料的密度高(0.18~0.6g/cm3),解决了当下制备垂直取向石墨烯材料难高密度化的问题。其导热率在200W/mK以上,能够用于热界面材料应用。此外可以加工成阵列形式,用于X射线冷阴极。该方法能够借助现有常见设备进行批量生产,所用基底能够重复利用,具有简单易得、灵活度高、成本低廉、易产业化等优势,在高端散热、电子发射材料等场景具有广阔应用前景。
Preparation method of high-density vertically-oriented graphene and thermal interface application of high-density vertically-oriented graphene
The invention discloses a high-density vertically-oriented graphene material as well as a preparation method and application thereof, and the high-density vertically-oriented graphene material is mainly characterized in that the high-density vertically-oriented graphene material is formed on a high-density active substrate through plasma enhanced chemical vapor deposition growth. The density of the obtained material is high (0.18-0.6 g/cm < 3 >), and the problem that the density of the vertically-oriented graphene material prepared at present is difficult to increase is solved. The thermal conductivity of the material is more than 200W/mK, and the material can be applied to thermal interface materials. In addition, the device can be processed into an array form for an X-ray cold cathode. According to the method, batch production can be carried out by means of existing common equipment, the used substrate can be reused, and the method has the advantages of being simple and easy to obtain, high in flexibility, low in cost, easy to industrialize and the like, and has wide application prospects in scenes of high-end heat dissipation, electron emission materials and the like.
本发明公开了一种高密度垂直取向石墨烯材料及其制备方法和应用,其主要特点为通过在高密度的活性基底上,通过离子体增强化学气相沉积生长形成高密度垂直取向石墨烯材料。所得材料的密度高(0.18~0.6g/cm3),解决了当下制备垂直取向石墨烯材料难高密度化的问题。其导热率在200W/mK以上,能够用于热界面材料应用。此外可以加工成阵列形式,用于X射线冷阴极。该方法能够借助现有常见设备进行批量生产,所用基底能够重复利用,具有简单易得、灵活度高、成本低廉、易产业化等优势,在高端散热、电子发射材料等场景具有广阔应用前景。
Preparation method of high-density vertically-oriented graphene and thermal interface application of high-density vertically-oriented graphene
一种高密度垂直取向石墨烯的制备方法及其热界面应用
PENG LUO (Autor:in) / ZENG XIANXIAN (Autor:in) / TAO XIAOZHE (Autor:in)
16.08.2024
Patent
Elektronische Ressource
Chinesisch
British Library Online Contents | 2013
|British Library Online Contents | 2013
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