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Sintered silicon nitride and method for producing sintered silicon nitride
Provided is a silicon nitride sintered body in which the orientation of beta-type silicon nitride (beta-Si3N4) particles is controlled and the thermal conductivity is further improved. The silicon nitride sintered body constitutes a substrate containing beta-type silicon nitride particles, and a Lotgering factor f (hk0) indicating the degree of orientation of the (hk0) plane of the beta-type silicon nitride particles in the substrate plane is a negative value.
本发明提供一种控制β型氮化硅(β‑Si3N4)粒子的取向，而进一步改善导热性能的氮化硅烧结体。氮化硅烧结体构成包含β型氮化硅粒子的基板，表示基板平面中的β型氮化硅粒子的(hk0)面的取向度的Lotgering因子f(hk0)为负值。
Sintered silicon nitride and method for producing sintered silicon nitride
Provided is a silicon nitride sintered body in which the orientation of beta-type silicon nitride (beta-Si3N4) particles is controlled and the thermal conductivity is further improved. The silicon nitride sintered body constitutes a substrate containing beta-type silicon nitride particles, and a Lotgering factor f (hk0) indicating the degree of orientation of the (hk0) plane of the beta-type silicon nitride particles in the substrate plane is a negative value.
本发明提供一种控制β型氮化硅(β‑Si3N4)粒子的取向，而进一步改善导热性能的氮化硅烧结体。氮化硅烧结体构成包含β型氮化硅粒子的基板，表示基板平面中的β型氮化硅粒子的(hk0)面的取向度的Lotgering因子f(hk0)为负值。
Sintered silicon nitride and method for producing sintered silicon nitride
氮化硅烧结体及氮化硅烧结体的制造方法
MATSUMOTO OSAMU (Autor:in) / TAKAHASHI MITSUTAKA (Autor:in)
23.08.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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