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Series of Misfit high-entropy layered structure compounds and preparation method thereof
The invention discloses a series of Misfit high-entropy layered-structure compounds and a preparation method thereof, and belongs to the technical field of inorganic non-metallic materials. The chemical formula of the Misfit high-entropy layered structure compound provided by the invention is shown as a formula (I), a formula (II) or a formula (III): [MX] 1 + delta [(HEMT) X2] n formula (I), [(HEMM) X] 1 + delta [TX2] n formula (II); [(HEMM) X] 1 + delta [(HEMT) X2] n Formula (III); wherein HEMM is selected from four or more of Sn, Pb, Bi, Sb, In, Ge or rare earth elements; hEMT is selected from four or more of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Re, Os, Rh, Ir, Au, Pd or Pt; x is selected from one or more of S, Se or Te; delta is equal to 0.08 to 0.28; n = 1, 2 or 3. The compound disclosed by the invention has the characteristics of a layered mismatch structure and a high-entropy structure, the obtained compound shows certain thermoelectric performance after being sintered into a block, and the compound has great potential in the application fields of low thermal conductivity, thermoelectric materials and the like. Meanwhile, the preparation method is simple, the reaction period is short, the cost is low, and a high-purity product can be obtained.
本发明公开了一系列Misfit高熵层状结构化合物及其制备方法,属于无机非金属材料技术领域。本发明提供的Misfit高熵层状结构化合物的化学式如式(I)、式(II)或式(III)所示:[MX]1+δ[(HEMT)X2]n式(I);[(HEMM)X]1+δ[TX2]n式(II);[(HEMM)X]1+δ[(HEMT)X2]n式(III);其中,HEMM选自Sn、Pb、Bi、Sb、In、Ge或稀土元素中的四种或四种以上;HEMT选自Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Re、Os、Rh、Ir、Au、Pd或Pt中的四种或四种以上;X选自S、Se或Te中的一种或多种;δ=0.08~0.28;n=1、2或3。本发明上述化合物具有层状错配结构以及高熵结构的特性,所得到的化合物烧结成块体后展现出一定的热电性能,在低热导、热电材料等应用领域具有较大潜力。同时,制备方法简易,反应周期短,成本低,可以获得高纯度的产物。
Series of Misfit high-entropy layered structure compounds and preparation method thereof
The invention discloses a series of Misfit high-entropy layered-structure compounds and a preparation method thereof, and belongs to the technical field of inorganic non-metallic materials. The chemical formula of the Misfit high-entropy layered structure compound provided by the invention is shown as a formula (I), a formula (II) or a formula (III): [MX] 1 + delta [(HEMT) X2] n formula (I), [(HEMM) X] 1 + delta [TX2] n formula (II); [(HEMM) X] 1 + delta [(HEMT) X2] n Formula (III); wherein HEMM is selected from four or more of Sn, Pb, Bi, Sb, In, Ge or rare earth elements; hEMT is selected from four or more of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Re, Os, Rh, Ir, Au, Pd or Pt; x is selected from one or more of S, Se or Te; delta is equal to 0.08 to 0.28; n = 1, 2 or 3. The compound disclosed by the invention has the characteristics of a layered mismatch structure and a high-entropy structure, the obtained compound shows certain thermoelectric performance after being sintered into a block, and the compound has great potential in the application fields of low thermal conductivity, thermoelectric materials and the like. Meanwhile, the preparation method is simple, the reaction period is short, the cost is low, and a high-purity product can be obtained.
本发明公开了一系列Misfit高熵层状结构化合物及其制备方法,属于无机非金属材料技术领域。本发明提供的Misfit高熵层状结构化合物的化学式如式(I)、式(II)或式(III)所示:[MX]1+δ[(HEMT)X2]n式(I);[(HEMM)X]1+δ[TX2]n式(II);[(HEMM)X]1+δ[(HEMT)X2]n式(III);其中,HEMM选自Sn、Pb、Bi、Sb、In、Ge或稀土元素中的四种或四种以上;HEMT选自Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Re、Os、Rh、Ir、Au、Pd或Pt中的四种或四种以上;X选自S、Se或Te中的一种或多种;δ=0.08~0.28;n=1、2或3。本发明上述化合物具有层状错配结构以及高熵结构的特性,所得到的化合物烧结成块体后展现出一定的热电性能,在低热导、热电材料等应用领域具有较大潜力。同时,制备方法简易,反应周期短,成本低,可以获得高纯度的产物。
Series of Misfit high-entropy layered structure compounds and preparation method thereof
一系列Misfit高熵层状结构化合物及其制备方法
CHEN HONGXIANG (Autor:in) / ZHAO ENHUI (Autor:in) / ZHANG JING (Autor:in) / WEN XIAOCHUN (Autor:in) / FAN HENGZHONG (Autor:in) / ZHANG YONGSHENG (Autor:in)
22.10.2024
Patent
Elektronische Ressource
Chinesisch
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