Dielectric ceramic and ceramic capacitor using same: Fid-Bau Portal

Dielectric ceramic and ceramic capacitor using same

TERANISHI TAKASHI / NOMURA KEISUKE / IKEDA JUN

Provided is a dielectric ceramic capable of simultaneously achieving a low dielectric loss tangent and a high relative dielectric constant. The present invention relates to a rutile-based film which has a composition containing, as a main component, a rutile-based compound represented by (TixSn1-x) O2 (0.40 < = x < = 0.60) and further containing Nb, and which comprises, in a cross-sectional view, a region comprising a Ti-rich phase in which A defined by formula (1) is 0.55 or more and a region comprising a Sn-rich phase in which B defined by formula (2) is 0.55 or more, and which satisfies formulae (3)-(5). A = (Ti content (atom%))/(Ti and Sn total content (atom%)) (1); b = (Sn content (atom%))/(total Ti and Sn content (atom%)) (2); 0.005 mol% < = y < = 0.020 mol% (3); 16 nm < = DTi < = 20 nm (4); 15 nm < = DSn < = 19 nm (5); y (mol%) is the Nb content when the rutile-type compound content is 100 mol%, DTi (nm) is the average size of the Ti-rich phase region, and DSn (nm) is the average size of the Sn-rich phase region.

本发明提供一种能够同时实现低介电损耗角正切和高相对介电常数的电介质陶瓷。具有包含由(TixSn1‑x)O2(0.40≤x≤0.60)表示的金红石型化合物作为主成分且进一步包含Nb的组成，剖视图中包括：由式(1)定义的A为0.55以上的富Ti相所构成的区域以及由式(2)定义的B为0.55以上的富Sn相所构成的区域，并且，满足式(3)～式(5)。A＝(Ti的含量(atom％))/(Ti与Sn的合计含量(atom％))(1)；B＝(Sn的含量(atom％))/(Ti与Sn的合计含量(atom％))(2)；0.005mol％≤y≤0.020mol％(3)；16nm≤DTi≤20nm(4)；15nm≤DSn≤19nm(5)；y(mol％)是将上述金红石型化合物的含量设为100mol％时的Nb的含量，DTi(nm)为富Ti相区域的平均尺寸，DSn(nm)为富Sn相区域的平均尺寸。

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