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High-strength porous silicon nitride ceramic and preparation method thereof
The invention relates to the technical field of ceramic material preparation, in particular to high-strength porous silicon nitride ceramic and a preparation method thereof.The preparation method comprises the following steps that S1, raw materials are weighed, mixed, ball-milled, dried and subjected to compression molding, and a biscuit is obtained; the raw materials comprise silicon powder, hexagonal boron nitride, a diluent and a sintering aid; s2, sintering the biscuit, and continuously introducing nitrogen in the sintering process; the method comprises the following steps: firstly, setting the pressure of nitrogen to 0.3-0.6 MPa, and raising the temperature to an initial nitriding temperature at a temperature raising rate of 5-15 DEG C/min; raising the temperature from the initial nitriding temperature to the final nitriding temperature at the temperature raising rate of 2-5 DEG C/min, and keeping the temperature for 1-2 hours; and finally, raising the pressure of the nitrogen to 1.0-1.5 MPa, raising the temperature from the final nitriding temperature to the sintering temperature at the temperature raising rate of 5-10 DEG C/min, keeping the temperature for 1 hour, and cooling to obtain the high-strength porous silicon nitride ceramic. The method is simple in process and low in cost, the mechanical property is greatly improved under the condition that the porosity is basically kept unchanged, and the problem that the mechanical property cannot be improved while the porosity is kept is solved.
本发明涉及陶瓷材料制备技术领域,具体涉及一种高强度多孔氮化硅陶瓷及其制备方法,包括如下步骤:S1,称取原料,混合球磨,干燥,压制成型,得到素坯;所述原料包括硅粉、六方氮化硼、稀释剂和烧结助剂;S2,对素坯进行烧结,烧结过程持续通入氮气;先将氮气压力设定为0.3~0.6MPa,并以5~15℃/min的升温速率升温至初始氮化温度;然后以2~5℃/min的升温速率从初始氮化温度升高到最终氮化温度,保温1~2h;最后将氮气压力升高至1.0~1.5MPa,并以5~10℃/min的升温速率从最终氮化温度升高到烧结温度,保温1h,冷却得到高强度多孔氮化硅陶瓷。所述方法工艺简单、成本低、在保持孔隙率基本不变的情况下大幅提升力学性能,解决了不能保持孔隙率的同时提高力学性能的问题。
High-strength porous silicon nitride ceramic and preparation method thereof
The invention relates to the technical field of ceramic material preparation, in particular to high-strength porous silicon nitride ceramic and a preparation method thereof.The preparation method comprises the following steps that S1, raw materials are weighed, mixed, ball-milled, dried and subjected to compression molding, and a biscuit is obtained; the raw materials comprise silicon powder, hexagonal boron nitride, a diluent and a sintering aid; s2, sintering the biscuit, and continuously introducing nitrogen in the sintering process; the method comprises the following steps: firstly, setting the pressure of nitrogen to 0.3-0.6 MPa, and raising the temperature to an initial nitriding temperature at a temperature raising rate of 5-15 DEG C/min; raising the temperature from the initial nitriding temperature to the final nitriding temperature at the temperature raising rate of 2-5 DEG C/min, and keeping the temperature for 1-2 hours; and finally, raising the pressure of the nitrogen to 1.0-1.5 MPa, raising the temperature from the final nitriding temperature to the sintering temperature at the temperature raising rate of 5-10 DEG C/min, keeping the temperature for 1 hour, and cooling to obtain the high-strength porous silicon nitride ceramic. The method is simple in process and low in cost, the mechanical property is greatly improved under the condition that the porosity is basically kept unchanged, and the problem that the mechanical property cannot be improved while the porosity is kept is solved.
本发明涉及陶瓷材料制备技术领域,具体涉及一种高强度多孔氮化硅陶瓷及其制备方法,包括如下步骤:S1,称取原料,混合球磨,干燥,压制成型,得到素坯;所述原料包括硅粉、六方氮化硼、稀释剂和烧结助剂;S2,对素坯进行烧结,烧结过程持续通入氮气;先将氮气压力设定为0.3~0.6MPa,并以5~15℃/min的升温速率升温至初始氮化温度;然后以2~5℃/min的升温速率从初始氮化温度升高到最终氮化温度,保温1~2h;最后将氮气压力升高至1.0~1.5MPa,并以5~10℃/min的升温速率从最终氮化温度升高到烧结温度,保温1h,冷却得到高强度多孔氮化硅陶瓷。所述方法工艺简单、成本低、在保持孔隙率基本不变的情况下大幅提升力学性能,解决了不能保持孔隙率的同时提高力学性能的问题。
High-strength porous silicon nitride ceramic and preparation method thereof
一种高强度多孔氮化硅陶瓷及其制备方法
CAO LIANGLIANG (Autor:in) / TANG RUNHONG (Autor:in) / MENG FANCHENG (Autor:in) / ZHANG CHUNYAN (Autor:in) / TIAN ZHONGQING (Autor:in) / WANG FEI (Autor:in)
22.11.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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