Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
The invention relates to a porous silicon carbide material and a preparation method thereof.The preparation method of the porous silicon carbide material comprises the steps that porous carbon serves as a carrier, protective gas and a gas-phase silicon source are introduced for chemical vapor deposition, and a first intermediate is obtained; continuously introducing protective gas, and calcining the first intermediate to obtain a second intermediate; and removing elemental carbon and/or elemental silicon in the second intermediate to obtain the porous silicon carbide material. In the preparation method disclosed by the invention, the gas-phase silicon source can be decomposed into amorphous nano silicon in situ in the porous carbon, and then the nano silicon can react with the carbon in situ to generate a silicon carbide skeleton during calcination treatment, so that the obtained porous silicon carbide material basically retains the skeleton structure of the porous carbon, and therefore, the porous silicon carbide material can be used for preparing the porous silicon carbide material. According to the preparation method, the pore structure of the porous silicon carbide material can be effectively controlled, and porous silicon carbide materials with different pore structures can be controllably prepared by selecting porous carbon with different pore structures as templates.
本发明涉及多孔碳化硅材料及其制备方法，所述多孔碳化硅材料的制备方法包括：以多孔碳为载体，通入保护气体和气相硅源进行化学气相沉积，得到第一中间体；继续通入保护气体，并将所述第一中间体进行煅烧处理，得到第二中间体；除去所述第二中间体中的单质碳和/或单质硅，得到多孔碳化硅材料。本发明的制备方法中，气相硅源可以在多孔碳内部原位分解成无定形的纳米硅，然后在煅烧处理时，纳米硅会与碳原位反应生成碳化硅骨架，使得到的多孔碳化硅材料基本保留了多孔碳的骨架结构，因此，本发明的制备方法可以有效控制多孔碳化硅材料的孔隙结构，并可以选用不同孔结构的多孔碳作为模板可控制备不同孔结构的多孔碳化硅材料。
The invention relates to a porous silicon carbide material and a preparation method thereof.The preparation method of the porous silicon carbide material comprises the steps that porous carbon serves as a carrier, protective gas and a gas-phase silicon source are introduced for chemical vapor deposition, and a first intermediate is obtained; continuously introducing protective gas, and calcining the first intermediate to obtain a second intermediate; and removing elemental carbon and/or elemental silicon in the second intermediate to obtain the porous silicon carbide material. In the preparation method disclosed by the invention, the gas-phase silicon source can be decomposed into amorphous nano silicon in situ in the porous carbon, and then the nano silicon can react with the carbon in situ to generate a silicon carbide skeleton during calcination treatment, so that the obtained porous silicon carbide material basically retains the skeleton structure of the porous carbon, and therefore, the porous silicon carbide material can be used for preparing the porous silicon carbide material. According to the preparation method, the pore structure of the porous silicon carbide material can be effectively controlled, and porous silicon carbide materials with different pore structures can be controllably prepared by selecting porous carbon with different pore structures as templates.
本发明涉及多孔碳化硅材料及其制备方法，所述多孔碳化硅材料的制备方法包括：以多孔碳为载体，通入保护气体和气相硅源进行化学气相沉积，得到第一中间体；继续通入保护气体，并将所述第一中间体进行煅烧处理，得到第二中间体；除去所述第二中间体中的单质碳和/或单质硅，得到多孔碳化硅材料。本发明的制备方法中，气相硅源可以在多孔碳内部原位分解成无定形的纳米硅，然后在煅烧处理时，纳米硅会与碳原位反应生成碳化硅骨架，使得到的多孔碳化硅材料基本保留了多孔碳的骨架结构，因此，本发明的制备方法可以有效控制多孔碳化硅材料的孔隙结构，并可以选用不同孔结构的多孔碳作为模板可控制备不同孔结构的多孔碳化硅材料。
Porous silicon carbide ceramic material and preparation method thereof
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